Ultrathin GeTe Crystal in a Strong Femtosecond Laser Field: Manifestation of a Quantum Size Effect

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The behavior of a thin-film GeTe crystal induced by intense femtosecond laser pulses (μm) has been studied using a pulsed electron diffractometer. The sample is an annealed 20-nm GeTe film on a copper grid with a carbon coating. It has been found that laser ablation results in the formation of an ultrathin GeTe crystal (assumingly, GeTe monolayer) with a high radiation resistance. Possible reasons for the detected nanosize effect are discussed.

作者简介

S. Aseev

Institute of Spectroscopy, Russian Academy of Sciences, 108840, Troitsk, Moscow, Russia

Email: isanfemto@yandex.ru

B. Mironov

Institute of Spectroscopy, Russian Academy of Sciences, 108840, Troitsk, Moscow, Russia

Email: isanfemto@yandex.ru

I. Kochikov

Faculty of Physics, Moscow State University, 119234, Moscow, Russia

Email: isanfemto@yandex.ru

A. Lotin

Institute of Problems of Laser and Information Technologies, Federal Scientific Research Centre Crystallography and Photonics, Russian Academy of Sciences, 140700, Shatura, Moscow region, Russia

Email: isanfemto@yandex.ru

A. Ishchenko

Lomonosov Institute of Fine Chemical Technology, Russian Technological University, 119571, Moscow, Russia

Email: isanfemto@yandex.ru

E. Ryabov

Institute of Spectroscopy, Russian Academy of Sciences, 108840, Troitsk, Moscow, Russia

编辑信件的主要联系方式.
Email: ryabov@isan.troitsk.ru

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