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<article xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xmlns:ali="http://www.niso.org/schemas/ali/1.0/" article-type="research-article" dtd-version="1.2" xml:lang="en"><front><journal-meta><journal-id journal-id-type="publisher-id">Russian Microelectronics</journal-id><journal-title-group><journal-title xml:lang="en">Russian Microelectronics</journal-title><trans-title-group xml:lang="ru"><trans-title>Микроэлектроника</trans-title></trans-title-group></journal-title-group><issn publication-format="print">0544-1269</issn><issn publication-format="electronic">3034-5480</issn><publisher><publisher-name xml:lang="en">The Russian Academy of Sciences</publisher-name></publisher></journal-meta><article-meta><article-id pub-id-type="publisher-id">699165</article-id><article-id pub-id-type="doi">10.7868/S3034548025060051</article-id><article-categories><subj-group subj-group-type="toc-heading" xml:lang="en"><subject>MODELING</subject></subj-group><subj-group subj-group-type="toc-heading" xml:lang="ru"><subject>МОДЕЛИРОВАНИЕ</subject></subj-group><subj-group subj-group-type="article-type"><subject>Research Article</subject></subj-group></article-categories><title-group><article-title xml:lang="en">A COMPACT ELECTROSTATIC ACTUATOR WITH ENHANCED CONTACT FORCE FOR RESISTIVE MEMS SWITCH</article-title><trans-title-group xml:lang="ru"><trans-title>МИНИАТЮРНЫЙ ЭЛЕКТРОСТАТИЧЕСКИЙ АКТЮАТОР С УВЕЛИЧЕННОЙ СИЛОЙ ПРИЖИМА ДЛЯ РЕЗИСТИВНОГО МЭМС-ПЕРЕКЛЮЧАТЕЛЯ</trans-title></trans-title-group></title-group><contrib-group><contrib contrib-type="author"><name-alternatives><name xml:lang="en"><surname>Uvarov</surname><given-names>I. V.</given-names></name><name xml:lang="ru"><surname>Уваров</surname><given-names>И. В.</given-names></name></name-alternatives><email>i.v.uvarov@bk.ru</email><xref ref-type="aff" rid="aff1"/><xref ref-type="aff" rid="aff2"/></contrib><contrib contrib-type="author"><name-alternatives><name xml:lang="en"><surname>Belozerov</surname><given-names>I. A.</given-names></name><name xml:lang="ru"><surname>Белозеров</surname><given-names>И. А.</given-names></name></name-alternatives><email>email@example.com</email><xref ref-type="aff" rid="aff1"/></contrib></contrib-group><aff-alternatives id="aff1"><aff><institution xml:lang="en">NRC "Kurchatov Institute" — Valiev IPT, Yaroslavl Branch</institution></aff><aff><institution xml:lang="ru">Центр научно-информационных технологий — Ярославль Отделения физико-технологических исследований имени К.А. Валиева НИЦ «Курчатовский Институт»</institution></aff></aff-alternatives><aff-alternatives id="aff2"><aff><institution xml:lang="en">P.G. Demidov Yaroslavl State University</institution></aff><aff><institution xml:lang="ru">Ярославский государственный университет им. П.Г. Демидова</institution></aff></aff-alternatives><pub-date date-type="pub" iso-8601-date="2025-12-15" publication-format="electronic"><day>15</day><month>12</month><year>2025</year></pub-date><volume>54</volume><issue>6</issue><issue-title xml:lang="en">VOL 54, NO6 (2025)</issue-title><issue-title xml:lang="ru">ТОМ 54, №6 (2025)</issue-title><fpage>516</fpage><lpage>527</lpage><history><date date-type="received" iso-8601-date="2025-12-23"><day>23</day><month>12</month><year>2025</year></date></history><permissions><copyright-statement xml:lang="en">Copyright ©; 2025, Russian Academy of Sciences</copyright-statement><copyright-statement xml:lang="ru">Copyright ©; 2025, Российская академия наук</copyright-statement><copyright-year>2025</copyright-year><copyright-holder xml:lang="en">Russian Academy of Sciences</copyright-holder><copyright-holder xml:lang="ru">Российская академия наук</copyright-holder><ali:free_to_read xmlns:ali="http://www.niso.org/schemas/ali/1.0/" start_date="2026-12-22"/></permissions><self-uri xlink:href="https://journals.eco-vector.com/0544-1269/article/view/699165">https://journals.eco-vector.com/0544-1269/article/view/699165</self-uri><abstract xml:lang="en"><p>Micromechanical switches are of great interest for microwave electronics, but their implementation is hampered by low reliability. Micron-sized actuators develop low contact force, which does not allow achieving low and stable contact resistance. The force is increased by using large-sized and complex-shaped electrodes, but a compact and simple actuator is preferable. The paper describes methods for increasing the contact force of a MEMS switch with electrostatic actuation. They are demonstrated on a compact actuator with a movable electrode in the form of a 50 μm long cantilever. Selection of vertical dimensions increases the force from 10 to 115 μN and exceeding the required threshold of 100 μN with a reserve. The restoring force also increases and protects the switch from stiction. Combining several actuators and removing intermediate contact bumps additionally increases the specific force by at least 50% compared to a single device.</p></abstract><trans-abstract xml:lang="ru"><p>Микромеханические переключатели представляют значительный интерес для СВЧ-электроники, однако их внедрению препятствует невысокая надежность. Актюаторы микронного размера развивают малую силу прижима контактов, не позволяющую достичь низкого и стабильного контактного сопротивления. Силу увеличивают за счет использования электродов большого размера и сложной формы, но компактный и простой привод более предпочтителен. В статье описаны методы увеличения контактной силы МЭМС-переключателя с электростатическим управлением. Они продемонстрированы на миниатюрном актюаторе с подвижным электродом в форме кантилевера длиной 50 мкм. Подбор вертикальных размеров позволяет нарастить силу с 10 до 115 мкН и с запасом преодолеть необходимый порог 100 мкН. Размыкающая сила также возрастает и обеспечивает защиту ключа от залипания. Объединение нескольких актюаторов и удаление промежуточных контактных выступов дополнительно повышают удельную силу по меньшей мере на 50% по сравнению с одиночным устройством.</p></trans-abstract><kwd-group xml:lang="en"><kwd>MEMS switch</kwd><kwd>electrostatic actuator</kwd><kwd>cantilever</kwd><kwd>contact force</kwd><kwd>restoring force</kwd><kwd>pull-in voltage</kwd><kwd>contact resistance</kwd></kwd-group><kwd-group xml:lang="ru"><kwd>МЭМС-переключатель</kwd><kwd>электростатический актюатор</kwd><kwd>кантилевер</kwd><kwd>сила прижима</kwd><kwd>размыкающая сила</kwd><kwd>напряжение срабатывания</kwd><kwd>контактное сопротивление</kwd></kwd-group><funding-group><funding-statement xml:lang="ru">Работа выполнена при финансовой поддержке РНФ, проект № 25-19-20107.</funding-statement></funding-group></article-meta></front><body></body><back><ref-list><ref id="B1"><label>1.</label><mixed-citation>Shao B., Lu C., Xiang Y., Li F., Song M. Comprehensive review of RF MEMS switches in satellite communications // Sensors. 2024. V. 24. 3135. https://doi.org/10.3390/s24103135</mixed-citation></ref><ref id="B2"><label>2.</label><mixed-citation>Cao T., Hu T., Zhao Y. Research status and development trend of MEMS switches: A review // Micromachines. 2020. V. 11. 694. https://doi.org/10.3390/mi11070694</mixed-citation></ref><ref id="B3"><label>3.</label><mixed-citation>Kurmendra, Kumar R. A review on RF micro-electro-mechanical-systems (MEMS) switch for radio frequency applications // Microsyst. Technol. 2021. V. 27. P. 2525–2542. https://doi.org/10.1007/s00542-020-05025-y</mixed-citation></ref><ref id="B4"><label>4.</label><mixed-citation>Heredia J., Ribó M., Pradell L., Wipf S.T., Göritz A., Wietstruck M., Wipf C., Kaynak M. A 125–143-GHz frequency-reconfigurable BiCMOS compact LNA using a single RF-MEMS switch // IEEE Microw. Compon. Lett. 2019. V. 29. P. 339–341. https://doi.org/10.1109/LMWC.2019.2906595</mixed-citation></ref><ref id="B5"><label>5.</label><mixed-citation>Iannacci J., Resta G., Bagolini A., Giacomozzi F., Bochkova E., Savin E., Kirtaev R., Tsarkov A., Donelli M. RF-MEMS monolithic K and Ka band multi-state phase shifters as building blocks for 5G and internet of things (IoT) applications // Sensors. 2020. V. 20. 2612. https://doi.org/10.3390/s20092612</mixed-citation></ref><ref id="B6"><label>6.</label><mixed-citation>Park J.-H., Lee S., Kim J.-M., Kim H.-T., Kwon Y., Kim Y.-K. Reconfigurable millimeter-wave filters using CPW-based periodic structures with novel multiple-contact MEMS switches // J. Microelectromech. Syst. 2005. V. 14. P. 456–463. https://doi.org/10.1109/JMEMS.2005.844849</mixed-citation></ref><ref id="B7"><label>7.</label><mixed-citation>Li M., Zhang Y., Zhao Y., Xue P., Wu Q. Design and fabrication of a 4-bit RF MEMS attenuator with a high attenuation accuracy // Analog Integr. Circ. Sig. Process. 2020. V. 102. P. 617–624. https://doi.org/10.1007/s10470-020-01608-x</mixed-citation></ref><ref id="B8"><label>8.</label><mixed-citation>van Spengen W.M., Roobol S.B., Klaassen W.P., Oosterkamp T.H. The MEMSamp: Using (RF-)MEMS switches for the micromechanical amplification of electronic signals // J. Micromech. Microeng. 2010. V. 20. 125011. https://doi.org/10.1088/0960-1317/20/12/125011</mixed-citation></ref><ref id="B9"><label>9.</label><mixed-citation>Petersen K.E. Dynamic micromechanics on silicon: Techniques and devices // IEEE Trans. Electron Dev. 1978. V. 25. P. 1241–1250. https://doi.org/10.1109/T-ED.1978.19259</mixed-citation></ref><ref id="B10"><label>10.</label><mixed-citation>Saleem M.M., Nawaz H. A systematic review of reliability issues in RF-MEMS switchess // Micro Nanosyst. 2019. V. 11. P. 11–33. https://doi.org/10.2174/1876402911666190204113856</mixed-citation></ref><ref id="B11"><label>11.</label><mixed-citation>Sharma A.K., Gautam A. K., Farinelli P., Dutta A., Singh S.G. A Ku band 5 bit MEMS phase shifter for active electronically steerable phased array applications // J. Micromech. Microeng. 2015. V. 25. 035014. https://doi.org/10.1088/0960-1317/25/3/035014</mixed-citation></ref><ref id="B12"><label>12.</label><mixed-citation>Stefanini R., Chatras M., Blondy P., Rebeiz G.M. Miniature MEMS switches for RF applications // J. Microelectromech. Syst. 2011. V. 20. P. 1324–1335. https://doi.org/10.1109/JMEMS.2011.2170822</mixed-citation></ref><ref id="B13"><label>13.</label><mixed-citation>Spasos M., Nilavalan R. Resistive damping implementation as a method to improve controllability in stiff ohmic RF-MEMS switches // Microsyst. Technol. 2013. V. 19. P. 1935–1943. https://doi.org/10.1007/s00542-013-1757-4</mixed-citation></ref><ref id="B14"><label>14.</label><mixed-citation>Liu B., Lv Z., He X., Liu M., Hao Y., Li Z. Improving performance of the metal-to-metal contact RF MEMS switch with a Pt-Au microspring contact design // J. Micromech. Microeng. 2011. V. 21. 065038. https://doi.org/10.1088/0960-1317/21/6/065038</mixed-citation></ref><ref id="B15"><label>15.</label><mixed-citation>Toler B.F., Coutu R.A., McBride J.W. A review of micro-contact physics for microelectromechanical systems (MEMS) metal contact switches // J. Micromech. Microeng. 2013. V. 23. 103001. https://doi.org/10.1088/0960-1317/23/10/103001</mixed-citation></ref><ref id="B16"><label>16.</label><mixed-citation>Basu A., Adams G.G., McGruer N.E. A review of micro-contact physics, materials, and failure mechanisms in direct-contact RF MEMS switches // J. Micromech. Microeng. 2016. V. 26. 104004. https://doi.org/10.1088/0960-1317/26/10/104004</mixed-citation></ref><ref id="B17"><label>17.</label><mixed-citation>Broue A., Dhennin J., Charvet P.-L., Pons P., Ben Jemaa N., Heeb P., Coccetti F., Plana R. Comparative study of RF MEMS micro-contact materials // Int. J. Microw. Wireless Technol. 2012. V. 4. P. 413–420. https://doi.org/10.1017/S1759078711001140</mixed-citation></ref><ref id="B18"><label>18.</label><mixed-citation>Chen L., Guo Z.J., Joshi N., Eid H., Adams G.G., McGruer N.E. An improved SPM-based contact tester for the study of microcontacts // J. Micromech. Microeng. 2012. V. 22. 045017. https://doi.org/10.1088/0960-1317/22/4/045017</mixed-citation></ref><ref id="B19"><label>19.</label><mixed-citation>Kwon H., Park J.-H., Lee H.-C., Choi D.-J., Park Y.-H., Nam H.-J., Joo Y.-C. Investigation of similar and dissimilar metal contacts for reliable radio frequency micorelectromechanical switches // Jpn. J. Appl. Phys. 2008. V. 47. P. 6558–6562. https://doi.org/10.1143/JJAP.47.6558</mixed-citation></ref><ref id="B20"><label>20.</label><mixed-citation>Rebeiz G.M., Patel C.D., Han S.K., Ko C.-H., Ho K.M.J. The search for a reliable MEMS switch // IEEE Microw. Mag. 2013. V. 14. P. 57–67. https://doi.org/10.1109/MMM.2012.2226540</mixed-citation></ref><ref id="B21"><label>21.</label><mixed-citation>Kim S.-B., Yoon Y.-H., Lee Y.-B., Choi K.-W., Jo M.-S., Min H.-W., Yoon J.-B. 4W power MEMS relay with extremely low contact resistance: theoretical analysis, design and demonstration // J. Microelectromech. Syst. 2020. V. 29. P. 1304–1313. https://doi.org/10.1109/JMEMS.2020.3005437</mixed-citation></ref><ref id="B22"><label>22.</label><mixed-citation>Kim S.-B., Min H.-W., Lee Y.-B., Kim S.-H., Choi P.-K., Yoon J.-B. Utilizing mechanical adhesion force as a high contact force in a MEMS relay // Sens. Actuators A. 2021. V. 331. 112894. https://doi.org/10.1016/j.sna.2021.112894</mixed-citation></ref><ref id="B23"><label>23.</label><mixed-citation>Blondy P., Pothier A., Stefanini R., Gauvin J., Passerieux D., Vendier O., Courtade F. Development of an all-metal large contact force reliable RF-MEMS relay for space applications // 42nd Europ. Microw. Conf. – 2012. https://doi.org/10.23919/EuMC.2012.6459332</mixed-citation></ref><ref id="B24"><label>24.</label><mixed-citation>Patel C.D., Rebeiz G.M. A high-reliability high-linearity high-power RF MEMS metal-contact switch for DC‑40-GHz applications // IEEE Trans. Microw. Theory Techn. 2012. V. 60. P. 3096–3112. https://doi.org/10.1109/TMTT.2012.2211888</mixed-citation></ref><ref id="B25"><label>25.</label><mixed-citation>Patel C.D., Rebeiz G.M. RF MEMS metal-contact switches with mN-contact and restoring forces and low process sensitivity // IEEE Trans. Microw. Theory Techn. 2011. V. 59. P. 1230–1237. https://doi.org/10.1109/TMTT.2010.2097693</mixed-citation></ref><ref id="B26"><label>26.</label><mixed-citation>Seki T., Uno Y., Narise K., Masuda T., Inoue K., Sato S., Sato F., Imanaka K., Sugiyama S. Development of a large-force low-loss metal-contact RF MEMS switch // Sens. Actuators A. 2006. V. 132. P. 683–688. https://doi.org/10.1016/j.sna.2006.02.016</mixed-citation></ref><ref id="B27"><label>27.</label><mixed-citation>Sedaghat-Pisheh H., Rebeiz G.M. Variable spring constant, high contact force RF MEMS switch // 2010 IEEE MTT-S Int. Microw. Symp. – 2010. https://doi.org/10.1109/MWSYM.2010.5517083</mixed-citation></ref><ref id="B28"><label>28.</label><mixed-citation>Belozerov I.A., Uvarov I.V. Performance optimization of the cantilever-based MEMS switch // St. Petersburg Polytech. Univ. J.: Phys. Math. 2022. V. 15. P. 140–144. https://doi.org/10.18721/JPM.153.226</mixed-citation></ref><ref id="B29"><label>29.</label><mixed-citation>Rebeiz G.M. RF MEMS: Theory, design, and technology. Hoboken, New Jersey: John Wiley &amp; Sons, 2003. 495 p.</mixed-citation></ref><ref id="B30"><label>30.</label><mixed-citation>Kimiaeifar A., Tolou N., Barari C., Herder J.L. Large deflection analysis of cantilever beam under end point and distributed loads // J. Chin. Inst. Eng. 2014. V. 37. P. 438–445. http://dx.doi.org/10.1080/02533839.2013.814991</mixed-citation></ref><ref id="B31"><label>31.</label><mixed-citation>Uvarov I.V., Kupriyanov A.N. Stiction-protected MEMS switch with low actuation voltage // Microsyst. Technol. 2019. V. 25. P. 3243–3251. https://doi.org/10.1007/s00542-018-4188-4</mixed-citation></ref><ref id="B32"><label>32.</label><mixed-citation>Uvarov I.V., Kupriyanov A.N. Investigation of characteristics of electrostatically actuated MEMS switch with an active contact breaking mechanism // Russ. Microelectron. 2018. V. 47. P. 307–316. https://doi.org/10.1134/S1063739718050086</mixed-citation></ref><ref id="B33"><label>33.</label><mixed-citation>Belozerov I.A., Uvarov I.V. MEMS switch based on a cantilever with increased contact force // Russ. Microelectron. 2023. V. 52. P. 475–482. https://doi.org/10.1134/S1063739723700774</mixed-citation></ref><ref id="B34"><label>34.</label><mixed-citation>Majumder S., McGruer N.E., Adams G.G., Zavracky P.M., Morrison R.H., Krim J. Study of contacts in an electrostatically actuated microswitch // Sens. Actuators A. 2001. V. 93. P. 19–26. https://doi.org/10.1016/S0924-4247(01)00627-6</mixed-citation></ref><ref id="B35"><label>35.</label><mixed-citation>Majumder S., Lampen J., Morrison R., Maciel J. MEMS switches // IEEE Instrum. Meas. Mag. 2003. V. 6. P. 12–15. https://doi.org/10.1109/MIM.2003.1184267</mixed-citation></ref><ref id="B36"><label>36.</label><mixed-citation>Ma Q., Tran Q., Chou T.-K.A., Heck J., Bar H., Kant R., Rao V. RF Metal contact reliability of RF MEMS switches // Proc. SPIE. 2007. V. 6463. 646305. https://doi.org/10.1117/12.702177</mixed-citation></ref></ref-list></back></article>
