Доклады Академии наукДоклады Академии наук0869-5652The Russian Academy of Sciences1282110.31857/S0869-5652485167-70Research ArticleEpitaxial growth, morphology and temperature stability of quartzlike dioxide germanium crystalsBalitskyV. S.balvlad@iem.ac.ruBalitskyD. V.balvlad@iem.ac.ruPushcharovskyD. Yu.<p>Academician of the RAS</p>balvlad@iem.ac.ruBalitskayaL. V.lvbalitskaya@mail.ruSetkovaT. V.lvbalitskaya@mail.ruDokinaT. N.lvbalitskaya@mail.ruD.S. Korzhinskii Institute of Experimental Mineralogy of Russian Academy of SciencesLomonosov Moscow State University19052019485167702205201922052019Copyright © 2019, Russian academy of sciences2019<p>The conditions and mechanisms of epitaxial growth of quartz-like a-GeO<sub>2</sub> crystals on quartz substrates using an evaporative-recirculation method are considered. Relatively homogenous a-GeO<sub>2</sub> crystals weighing up to 200 g are grown at a growth rate of up to 0.3 mm/day. It is established that molecular adhesion at the boundary between the quartz substrate and the overgrown layer of a-GeO<sub>2</sub> cannot prevent its transition to a stable poorly soluble rutile-like phase. This makes it impossible to grow high-germanium quartz single crystals industrially using a mixture of quartz and quartz-like a-GeO<sub>2</sub> as a nutrient. However, this process can be implemented if other more soluble germanium-containing compounds, such as quartz-like Si-containing germanium-oxide, are found.</p>germanium dioxidequartzhigh germanium quartzpiezoelectriccrystal growthepitaxyдиоксид германиякварцвысокогерманиевый кварцпьезоэлектрикрост кристалловэпитаксия[Балицкий В.С., Балицкий Д.В., Пущаровский Д. Ю., Сеткова Т. В., Балицкая Л. В., Некрасов А.Н. // ДАН. 2017. Т. 477. № 5. С. 578-581.][Балицкий В.С., Балицкий Д.В., Некрасов А.Н., Балицкая Л. В., Бондаренко Г. В., Самохвалова O. Л. // ДАН. 2004. Т. 396. № 1. С. 89-92.][Clavier D ., Prakasam M ., Largeteau A ., Boy J.J ., Hehlen B., Cambon M., Cambon O. // Cryst. Eng. Com- muns. 2016. V. 18. № 14. P. 2500-2508.][Ranieri V ., Darracq S ., Cambon M ., Haines J ., Cam- bon O., Largeteau A., Demazeau G. // Inorg. Chem. 2011. V. 50. № 10. P. 4632-4639.][Косова Т. Б., Демьянец Л. Н. // ЖНХ. 1988. Т. 33. В. 10. С. 2654-2661.][Roy R ., Theokritoff S . // J. Cryst. Growth. 1972. V. 12. № 1. P. 69-72.][Балицкий Д. В., Балицкий В. С., Писаревский Ю. В., Сильвестрова О. Ю., Филиппо Э. // Кристаллография. 2000. Т. 45. № 1. C.151-153.][Balitsky D. V ., Balitsky V. S., Puscharovsky D.Yu., Kosenko A. V., Bondarenko G. V. // J. Cryst. Growth. 1997. V. 180. Р. 212-219.][Balitsky D. V ., Balitsky V. S ., Pisarevsky Yu.V ., Philip- pot E., Puscharovsky D.Yu., Sil'vestrova O.Yu. // Ann. Chim. Mat. 2001. V. 26. P. 183-192]