Email this article Silicon carbide for power ICs: fabrication of wafers with epitaxial layers
- Authors: Ivanov V.1
-
Affiliations:
- ООО «ТТМ»
- Issue: No 3 (2026)
- Pages: 164-169
- Section: Manufacturing technologies
- URL: https://journals.eco-vector.com/1992-4178/article/view/706592
- DOI: https://doi.org/10.22184/1992-4178.2026.255.3.164.169
- ID: 706592
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Abstract
The paper describes the first three stages of the silicon carbide-based integrated circuit manufacturing cycle: single crystal growth, wafer fabrication and epitaxy. An overview of current technological solutions and equipment used at these stages is presented.
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About the authors
V. Ivanov
ООО «ТТМ»
Author for correspondence.
Email: vi@ttmicro.ru
начальник технического отдела
Russian FederationReferences
- Ostling M., Koo S.-M., Lee S.-K. et al. SiC device technology for high voltage and RF power applications // 23rd International Conference on Microelectronics. May 2002.
- https://www.vet-china.com/news/silicon-carbide-crystal-growth-process-and-equipment-technology/.
- Kondrath N., Kazimierczuk M. K. Characteristics and applications of silicon carbide power devices in power electronics // International Journal of Electronics and Telecommunications. 2010. V. 56, No. 3. PP. 231–236.
- SiC end face inclination and reference edge measurement technology (http://www.malvernpanalytical17.com/Article-4073618.html).
- Zhang L., Wang H., Chen Y. et al. Comparative study on substrate quality of laser slicing and wire saw slicing for SiC wafers // CrystEngComm. 2026. V. 28, No. 1, PP. 177–188.
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