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<article xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xmlns:ali="http://www.niso.org/schemas/ali/1.0/" article-type="research-article" dtd-version="1.2" xml:lang="en"><front><journal-meta><journal-id journal-id-type="publisher-id">Photonics Russia</journal-id><journal-title-group><journal-title xml:lang="en">Photonics Russia</journal-title><trans-title-group xml:lang="ru"><trans-title>Фотоника</trans-title></trans-title-group></journal-title-group><issn publication-format="print">1993-7296</issn><issn publication-format="electronic">2686-844X</issn><publisher><publisher-name xml:lang="en">Technosphera JSC</publisher-name></publisher></journal-meta><article-meta><article-id pub-id-type="publisher-id">627985</article-id><article-id pub-id-type="doi">10.22184/1993-7296.FRos.2023.17.7.556.564</article-id><article-categories><subj-group subj-group-type="toc-heading" xml:lang="en"><subject>Quantum Technologies</subject></subj-group><subj-group subj-group-type="toc-heading" xml:lang="ru"><subject>Квантовые технологии</subject></subj-group><subj-group subj-group-type="article-type"><subject>Research Article</subject></subj-group></article-categories><title-group><article-title xml:lang="en">Study of Integrated Optical Switch for Development of Logical Element Controlled by the Thermal Influence on Ge<sub>2</sub>Sb<sub>2</sub>Te<sub>5</sub> Layer (GST)</article-title><trans-title-group xml:lang="ru"><trans-title>Исследование интегрально-оптического ключа для создания логического элемента, управляемого термическим воздействием на слой Ge<sub>2</sub>Sb<sub>2</sub>Te<sub>5</sub>(GST)</trans-title></trans-title-group></title-group><contrib-group><contrib contrib-type="author"><contrib-id contrib-id-type="orcid">https://orcid.org/0000-0002-7960-1583</contrib-id><name-alternatives><name xml:lang="en"><surname>Kadochkin</surname><given-names>A. S.</given-names></name><name xml:lang="ru"><surname>Кадочкин</surname><given-names>А. С.</given-names></name></name-alternatives><address><country country="RU">Russian Federation</country></address><bio xml:lang="en"><p>Cand. of Sciences (Phyth.&amp;Math.), senior researcher of the microsystems engineering department of the Federal State Budgetary Scientific Institution</p></bio><bio xml:lang="ru"><p>кандидат ф.- м. наук, старший научный сотрудник отдела МСТ ФГБУН</p></bio><email>journal@electronics.ru</email><xref ref-type="aff" rid="aff1"/></contrib><contrib contrib-type="author"><contrib-id contrib-id-type="orcid">https://orcid.org/0000-0002-4204-2626</contrib-id><name-alternatives><name xml:lang="en"><surname>Amelichev</surname><given-names>V. V.</given-names></name><name xml:lang="ru"><surname>Амеличев</surname><given-names>В. В.</given-names></name></name-alternatives><address><country country="RU">Russian Federation</country></address><bio xml:lang="en"><p>Cand. of Sciences (Eng.), head of the microsystems engineering department</p></bio><bio xml:lang="ru"><p>кандидат т. наук, начальник отдела МСТ ФГБУН</p></bio><email>journal@electronics.ru</email><xref ref-type="aff" rid="aff1"/></contrib><contrib contrib-type="author"><contrib-id contrib-id-type="orcid">https://orcid.org/0000-0002-7455-7800</contrib-id><name-alternatives><name xml:lang="en"><surname>Generalov</surname><given-names>S. S.</given-names></name><name xml:lang="ru"><surname>Генералов</surname><given-names>С. С.</given-names></name></name-alternatives><address><country country="RU">Russian Federation</country></address><bio xml:lang="en"><p>Head of the research laboratory for nano- and micromechanical systems, microsystems engineering department</p></bio><bio xml:lang="ru"><p>начальник НИЛ НМЭМС отдела МСТ ФГБУН</p></bio><email>journal@electronics.ru</email><xref ref-type="aff" rid="aff1"/></contrib><contrib contrib-type="author"><contrib-id contrib-id-type="orcid">https://orcid.org/0000-0002-0887-9406</contrib-id><name-alternatives><name xml:lang="en"><surname>Gorelov</surname><given-names>D. V.</given-names></name><name xml:lang="ru"><surname>Горелов</surname><given-names>Д. В.</given-names></name></name-alternatives><address><country country="RU">Russian Federation</country></address><bio xml:lang="en"><p>Head of the research laboratory for integrated microcircuits, microsystems engineering department</p></bio><bio xml:lang="ru"><p>начальник НИЛ ИОМС отдела МСТ ФГБУН</p></bio><email>journal@electronics.ru</email><xref ref-type="aff" rid="aff1"/></contrib></contrib-group><aff-alternatives id="aff1"><aff><institution xml:lang="en">Research and Production Complex “Technological Center”</institution></aff><aff><institution xml:lang="ru">НПК «Технологический центр»</institution></aff></aff-alternatives><pub-date date-type="pub" iso-8601-date="2023-10-31" publication-format="electronic"><day>31</day><month>10</month><year>2023</year></pub-date><volume>17</volume><issue>7</issue><issue-title xml:lang="en"/><issue-title xml:lang="ru"/><fpage>556</fpage><lpage>564</lpage><history><date date-type="received" iso-8601-date="2024-03-02"><day>02</day><month>03</month><year>2024</year></date><date date-type="accepted" iso-8601-date="2024-03-02"><day>02</day><month>03</month><year>2024</year></date></history><permissions><copyright-statement xml:lang="en">Copyright ©; 2023, Kadochkin A.S., Amelichev V.V., Generalov S.S., Gorelov D.V.</copyright-statement><copyright-statement xml:lang="ru">Copyright ©; 2023, Кадочкин А.С., Амеличев В.В., Генералов С.С., Горелов Д.В.</copyright-statement><copyright-year>2023</copyright-year><copyright-holder xml:lang="en">Kadochkin A.S., Amelichev V.V., Generalov S.S., Gorelov D.V.</copyright-holder><copyright-holder xml:lang="ru">Кадочкин А.С., Амеличев В.В., Генералов С.С., Горелов Д.В.</copyright-holder></permissions><self-uri xlink:href="https://journals.eco-vector.com/1993-7296/article/view/627985">https://journals.eco-vector.com/1993-7296/article/view/627985</self-uri><abstract xml:lang="en"><p>The alternating phase layer Ge<sub>2</sub>Sb<sub>2</sub>Te<sub>5</sub> (GST) demonstrates a significant refractive index difference between the amorphous (a-GST) and crystalline (c-GST) states. The fast and reversible phase transition between the two states allows for high speed and thermal stability of integrated optical devices. The paper presents a study of an integrated optical switch based on an annular microresonator with a superimposed GST layer controlled by the thermal influence. Such switches may be used in the optical circuits to implement logic functions.</p></abstract><trans-abstract xml:lang="ru"><p>Представлены результаты модельной экспериментальной оценки возможности управления с помощью внешнего термического воздействия интегрально-оптическим ключом, выполненным в виде кольцевого микрорезонатора с наложенным фазопеременным слоем Ge<sub>2</sub>Sb<sub>2</sub>Te<sub>5</sub> (GST). Быстрый и обратимый фазовый переход между двумя состояниями – аморфным (a-GST) и кристаллическим (c-GST) – сопровождает большая разность показателей преломления, что может быть использовано в оптических схемах для реализации логических функций.</p></trans-abstract><kwd-group xml:lang="en"><kwd>integrated optical switch</kwd><kwd>microresonator</kwd><kwd>GST layer</kwd><kwd>logical element</kwd><kwd>optical resonance</kwd></kwd-group><kwd-group xml:lang="ru"><kwd>интегрально-оптический ключ</kwd><kwd>микрорезонатор</kwd><kwd>слой GST</kwd><kwd>логический элемент</kwd><kwd>оптический резонанс</kwd></kwd-group><funding-group><funding-statement xml:lang="en">This article has been prepared with the financial support of the Ministry of Education and Science of the Russian Federation as a part of the research work FNRM-2022-0007</funding-statement><funding-statement xml:lang="ru">Настоящая статья подготовлена при финансовой поддержке Министерства образования и науки Российской Федерации в рамках выполнения НИР FNRM-2022–0007</funding-statement></funding-group></article-meta></front><body></body><back><ref-list><ref id="B1"><label>1.</label><mixed-citation>Kizhakkakath F., Ravindran S. 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