Determination of the optical characteristics of planar Si3N4 ring microresonators depending on their geometric properties

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Abstract

In this work, the dependence of the optical characteristics of planar Si3N4 ring microresonators on their geometric properties is investigated. The dependence of the intrinsic and loaded quality factors of the ring resonator on the distance between the ring and the resonator waveguide is shown. Changing this distance allows tuning coupling coefficient of the resonator. As a result, the optimal geometric properties of the resonator that provide the highest quality factor have been determined. The results of this work can be used for the further development of photonic integrated circuits made of silicon nitride and devices based on them.

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About the authors

A. I. Abanin

Scientific-Manufacturing Complex "Technological Centre"; Ulyanovsk State University; National Research University of Electronic Technology (MIET)

Author for correspondence.
Email: aai-2000@mail.ru
ORCID iD: 0009-0004-9981-3083

Engineer

Russian Federation, Moscow; Ulyanovsk; Moscow

V. V. Kovalyuk

University of Science and Technology MISIS

Email: aai-2000@mail.ru
ORCID iD: 0000-0002-1529-4481

Cand. of Sci. (Physics and Mathematics), Head of Laboratory

Russian Federation, Moscow

E. P. Kitsyuk

Scientific-Manufacturing Complex "Technological Centre"

Email: aai-2000@mail.ru
ORCID iD: 0000-0002-4166-8408

Cand. of Sci. (Tech), Head of Laboratory

Russian Federation, Москва

P. I. Lazarenko

National Research University of Electronic Technology (MIET)

Email: aai-2000@mail.ru
ORCID iD: 0000-0003-4309-3481

Cand. of Sci. (Tech), Head of laboratory

Russian Federation, Moscow

V. V. Svetukhin

Scientific-Manufacturing Complex "Technological Centre"

Email: aai-2000@mail.ru
ORCID iD: 0000-0003-0831-9254

Doct. of Sci. (Physics and Mathematics), Director, Corresponding Member of RAS

Russian Federation, Москва

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Supplementary files

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2. Fig.1. Image of formed elements obtained in an optical microscope

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3. Fig.2. Schematic diagram of the measuring stand

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4. Fig.3. Dependences of loaded goodness: a – Qload and full width at half height (FWHM) of the resonance; b – on the size of the gap between the ring and the MCR waveguide

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Copyright (c) 2025 Abanin A.I., Kovalyuk V.V., Kitsyuk E.P., Lazarenko P.I., Svetukhin V.V.