<?xml version="1.0" encoding="UTF-8"?>
<!DOCTYPE root>
<article xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xmlns:ali="http://www.niso.org/schemas/ali/1.0/" article-type="research-article" dtd-version="1.2" xml:lang="en"><front><journal-meta><journal-id journal-id-type="publisher-id">Nanoindustry</journal-id><journal-title-group><journal-title xml:lang="en">Nanoindustry</journal-title><trans-title-group xml:lang="ru"><trans-title>Наноиндустрия</trans-title></trans-title-group></journal-title-group><issn publication-format="print">1993-8578</issn><issn publication-format="electronic">2687-0282</issn><publisher><publisher-name xml:lang="en">Technosphera JSC</publisher-name></publisher></journal-meta><article-meta><article-id pub-id-type="publisher-id">697257</article-id><article-id pub-id-type="doi">10.22184/1993-8578.2025.18.7-8.432.439</article-id><article-categories><subj-group subj-group-type="toc-heading" xml:lang="en"><subject>Equipment for Nanoindustry</subject></subj-group><subj-group subj-group-type="toc-heading" xml:lang="ru"><subject>Оборудование для наноиндустрии</subject></subj-group><subj-group subj-group-type="article-type"><subject>Research Article</subject></subj-group></article-categories><title-group><article-title xml:lang="en">Determination of the optical characteristics of planar Si<sub>3</sub>N<sub>4</sub> ring microresonators depending on their geometric properties</article-title><trans-title-group xml:lang="ru"><trans-title>Определение зависимости оптических характеристик планарных Si<sub>3</sub>N<sub>4</sub> кольцевых микрорезонаторов от их геометрических свойств</trans-title></trans-title-group></title-group><contrib-group><contrib contrib-type="author"><contrib-id contrib-id-type="orcid">https://orcid.org/0009-0004-9981-3083</contrib-id><name-alternatives><name xml:lang="en"><surname>Abanin</surname><given-names>A. I.</given-names></name><name xml:lang="ru"><surname>Абанин</surname><given-names>А. И.</given-names></name></name-alternatives><address><country country="RU">Russian Federation</country></address><bio xml:lang="en"><p>Engineer</p></bio><bio xml:lang="ru"><p>инж.</p></bio><email>aai-2000@mail.ru</email><xref ref-type="aff" rid="aff1"/><xref ref-type="aff" rid="aff2"/><xref ref-type="aff" rid="aff3"/></contrib><contrib contrib-type="author"><contrib-id contrib-id-type="orcid">https://orcid.org/0000-0002-1529-4481</contrib-id><name-alternatives><name xml:lang="en"><surname>Kovalyuk</surname><given-names>V. V.</given-names></name><name xml:lang="ru"><surname>Ковалюк</surname><given-names>В. В.</given-names></name></name-alternatives><address><country country="RU">Russian Federation</country></address><bio xml:lang="en"><p>Cand. of Sci. (Physics and Mathematics), Head of Laboratory</p></bio><bio xml:lang="ru"><p>к.ф.-м.н., зав. лаб.</p></bio><email>aai-2000@mail.ru</email><xref ref-type="aff" rid="aff4"/></contrib><contrib contrib-type="author"><contrib-id contrib-id-type="orcid">https://orcid.org/0000-0002-4166-8408</contrib-id><name-alternatives><name xml:lang="en"><surname>Kitsyuk</surname><given-names>E. P.</given-names></name><name xml:lang="ru"><surname>Кицюк</surname><given-names>Е. П.</given-names></name></name-alternatives><address><country country="RU">Russian Federation</country></address><bio xml:lang="en"><p>Cand. of Sci. (Tech), Head of Laboratory</p></bio><bio xml:lang="ru"><p>к.т.н., нач. лаб.</p></bio><email>aai-2000@mail.ru</email><xref ref-type="aff" rid="aff1"/></contrib><contrib contrib-type="author"><contrib-id contrib-id-type="orcid">https://orcid.org/0000-0003-4309-3481</contrib-id><name-alternatives><name xml:lang="en"><surname>Lazarenko</surname><given-names>P. I.</given-names></name><name xml:lang="ru"><surname>Лазаренко</surname><given-names>П. И.</given-names></name></name-alternatives><address><country country="RU">Russian Federation</country></address><bio xml:lang="en"><p>Cand. of Sci. (Tech), Head of laboratory</p></bio><bio xml:lang="ru"><p>к.т.н., нач. лаб.</p></bio><email>aai-2000@mail.ru</email><xref ref-type="aff" rid="aff3"/></contrib><contrib contrib-type="author"><contrib-id contrib-id-type="orcid">https://orcid.org/0000-0003-0831-9254</contrib-id><name-alternatives><name xml:lang="en"><surname>Svetukhin</surname><given-names>V. V.</given-names></name><name xml:lang="ru"><surname>Светухин</surname><given-names>В. В.</given-names></name></name-alternatives><address><country country="RU">Russian Federation</country></address><bio xml:lang="en"><p>Doct. of Sci. (Physics and Mathematics), Director, Corresponding Member of RAS</p></bio><bio xml:lang="ru"><p>д.ф.-м.н, проф., чл.-корр. РАН, дир.</p></bio><email>aai-2000@mail.ru</email><xref ref-type="aff" rid="aff1"/></contrib></contrib-group><aff-alternatives id="aff1"><aff><institution xml:lang="en">Scientific-Manufacturing Complex "Technological Centre"</institution></aff><aff><institution xml:lang="ru">НПК "Технологический центр"</institution></aff></aff-alternatives><aff-alternatives id="aff2"><aff><institution xml:lang="en">Ulyanovsk State University</institution></aff><aff><institution xml:lang="ru">Ульяновский государственный университет</institution></aff></aff-alternatives><aff-alternatives id="aff3"><aff><institution xml:lang="en">National Research University of Electronic Technology (MIET)</institution></aff><aff><institution xml:lang="ru">Национальный исследовательский университет "МИЭТ"</institution></aff></aff-alternatives><aff-alternatives id="aff4"><aff><institution xml:lang="en">University of Science and Technology MISIS</institution></aff><aff><institution xml:lang="ru">Университет науки и технологий МИСИС</institution></aff></aff-alternatives><pub-date date-type="pub" iso-8601-date="2025-12-10" publication-format="electronic"><day>10</day><month>12</month><year>2025</year></pub-date><volume>18</volume><issue>7-8</issue><issue-title xml:lang="en"/><issue-title xml:lang="ru"/><fpage>432</fpage><lpage>439</lpage><history><date date-type="received" iso-8601-date="2025-12-02"><day>02</day><month>12</month><year>2025</year></date></history><permissions><copyright-statement xml:lang="en">Copyright ©; 2025, Abanin A.I., Kovalyuk V.V., Kitsyuk E.P., Lazarenko P.I., Svetukhin V.V.</copyright-statement><copyright-statement xml:lang="ru">Copyright ©; 2025, Абанин А.И., Ковалюк В.В., Кицюк Е.П., Лазаренко П.И., Светухин В.В.</copyright-statement><copyright-year>2025</copyright-year><copyright-holder xml:lang="en">Abanin A.I., Kovalyuk V.V., Kitsyuk E.P., Lazarenko P.I., Svetukhin V.V.</copyright-holder><copyright-holder xml:lang="ru">Абанин А.И., Ковалюк В.В., Кицюк Е.П., Лазаренко П.И., Светухин В.В.</copyright-holder></permissions><self-uri xlink:href="https://journals.eco-vector.com/1993-8578/article/view/697257">https://journals.eco-vector.com/1993-8578/article/view/697257</self-uri><abstract xml:lang="en"><p>In this work, the dependence of the optical characteristics of planar Si<sub>3</sub>N<sub>4</sub> ring microresonators on their geometric properties is investigated. The dependence of the intrinsic and loaded quality factors of the ring resonator on the distance between the ring and the resonator waveguide is shown. Changing this distance allows tuning coupling coefficient of the resonator. As a result, the optimal geometric properties of the resonator that provide the highest quality factor have been determined. The results of this work can be used for the further development of photonic integrated circuits made of silicon nitride and devices based on them.</p></abstract><trans-abstract xml:lang="ru"><p>В данной работе исследуется зависимость оптических характеристик планарных Si<sub>3</sub>N<sub>4</sub> кольцевых микрорезонаторов от их геометрических характеристик. Показаны зависимости собственной и нагруженной добротностей кольцевого резонатора от величины расстояния между кольцом и волноводом резонатора, изменение которой позволяет управлять коэффициентом сопряжения резонатора. В результате определены оптимальные геометрические параметры резонатора, обеспечивающие наивысшую добротность. Результаты работы могут быть использованы для дальнейшего изготовления фотонных интегральных схем из нитрида кремния и устройств на их основе.</p></trans-abstract><kwd-group xml:lang="en"><kwd>ring microresonators</kwd><kwd>quality factor</kwd><kwd>photonic integrated circuits</kwd></kwd-group><kwd-group xml:lang="ru"><kwd>кольцевые микрорезонаторы</kwd><kwd>добротность</kwd><kwd>фотонные интегральные схемы</kwd></kwd-group><funding-group><funding-statement xml:lang="en">This work was financially supported by the Ministry of Science and Higher Education of the Russian Federation (FNRM-2025-0014)</funding-statement><funding-statement xml:lang="ru">Работа выполнена при финансовой поддержке Министерства науки и высшего образования Российской Федерации в рамках выполнения НИР FNRM-2025-0014</funding-statement></funding-group></article-meta></front><body></body><back><ref-list><ref id="B1"><label>1.</label><mixed-citation>Doerr C.R. Silicon photonic integration in telecommunications. Frontier in Physics. 2015. Vol. 3. article 37, Aug. 05. https://doi.org/10.3389/fphy.2015.00037</mixed-citation></ref><ref id="B2"><label>2.</label><mixed-citation>G. de Valicourt, Chang C-M., Eggleston M.S., Melikyan A., Zhu C., Lee J., Simsarian J.E., Chandrasekhar S., Sinsky J.H., Kim K.W., Dong P., Maho A., Verdier A., Brenot R., Chen Y.K. Photonic integrated circuit based on hybrid III–V/silicon integration. Journal of Lightwave Technology. 2018. Vol. 36. No. 2. PP. 265–273. https://doi.org/10.1109/JLT.2017.2776214</mixed-citation></ref><ref id="B3"><label>3.</label><mixed-citation>Verdier A., G. de Valicourt, Brenot R., Debregeas H., Dong P., Earnshaw M., Carrere H., Chen Y.K. Ultra-wide band wavelength-tunable hybrid external-cavity lasers. Journal of Lightwave Technology. 2018. Vol. 36. No. 1. PP. 37–43. https://doi.org/10.1109/JLT.2017.2757603</mixed-citation></ref><ref id="B4"><label>4.</label><mixed-citation>Gao Y., Lee S., Patel R., Lo J-C., Sun J., Zhu L., Zhou J., Hong J. High-performance hybrid-integrated silicon photonic tunable laser. Optical Fiber Communication Conference. 2019. Paper W4E.5. https://doi.org/10.1364/OFC.2019.W4E.5</mixed-citation></ref><ref id="B5"><label>5.</label><mixed-citation>Selvaraja S.K. et al. Highly uniform and low-loss passive silicon photonics devices using a 300 mm CMOS platform. Optical Fiber Communication Conference. 2014. OSA Technical Digest (online), paper Th2A.33. https://doi.org/10.1364/OFC.2014.Th2A.33</mixed-citation></ref><ref id="B6"><label>6.</label><mixed-citation>Xuan Y. et al. High-Q silicon nitride microresonators exhibiting low-power frequency comb initiation. Optica 3. 2016. PP. 1171–1180. https://doi.org/10.1364/OPTICA.3.001171</mixed-citation></ref><ref id="B7"><label>7.</label><mixed-citation>Ji X. et al. Ultra-low-loss on-chip resonators with sub-milliwatt parametric oscillation threshold. Optica 4. 2017. PP. 619–624. https://doi.org/10.1364/OPTICA.4.000619</mixed-citation></ref><ref id="B8"><label>8.</label><mixed-citation>Xingchen J., Samantha R., Corato-Zanarella M., Lipson M. Methods to achieve ultra-high quality factor silicon nitride resonators. APL Photonics 1. 2021. July. Vol. 6 (7). P. 071101. https://doi.org/10.1063/5.0057881</mixed-citation></ref><ref id="B9"><label>9.</label><mixed-citation>Bauters J.H., Martijn J., Demis D., Daoxin T., Ming-Chun B., Jonathon L., Arne H., Blumenthal R.G., Daniel B.J. Ultra-low-loss high-aspect-ratio Si3N 4 waveguides. Optics Express. 2011. Vol. 19. PP. 3163–3174. https://doi.org/10.1364/OE.19.003163</mixed-citation></ref><ref id="B10"><label>10.</label><mixed-citation>Chang L. et al. Ultra-efficient frequency comb generation in AlGaAs-oninsulator microresonators. Nat. Communication. 2020. Vol. 11. P. 1331. https://doi.org/10.1038/s41467-020-15005-5</mixed-citation></ref><ref id="B11"><label>11.</label><mixed-citation>Ciminelli C., Dell’Olio F., Armenise M.N., Soares F.M. Passenberg W. High performance InP ring resonator for new generation monolithically integrated optical gyroscopes. Opt. Express 21. 2013. PP. 556–564. https://doi.org/10.1364/OE.21.000556</mixed-citation></ref><ref id="B12"><label>12.</label><mixed-citation>An P., Kovalyuk V., Golikov A., Zubkova E., Ferrari S., Korneev A., Pernice W., Goltsman G. Experimental optimisation of O-ring resonator Q-factor for on-chip spontaneous four wave mixing. Journal of Physics: Conference Series. 2018. Vol. 1124. Iss. 5. https://doi.org/10.1088/1742-6596/1124/5/051047</mixed-citation></ref></ref-list></back></article>
