Development of multilayer metal films for studying the chiral spin structures dynamics

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Abstract

Using magnetron sputtering, contact and photolithography installations, thin-film structures with conductive contacts of different profiles based on metal nanostructures of the heavy metal-ferromagnet type were manufactured. The parameters of the effective magnetization reversal and the magnitude of the current-induced field were determined from the magnetization and spin Hall effect measurements. The current-induced dynamics of skyrmions for ferro- and ferrimagnetic layers was simulated. The results of the work are of interest for studying spin-transport effects and developing methods for controlling spin textures in multilayer films, promising for creating new electronic elements.

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About the authors

A. V. Telegin

M.N. Mikheev Institute of Metal Physics UB of RAS

Author for correspondence.
Email: telegin@imp.uran.ru
ORCID iD: 0000-0001-7209-4307

Cand. of Sci. (Physics and Mathematics), Head of Laboratory

Russian Federation, Ekaterinburg

T. N. Pavlov

M.N. Mikheev Institute of Metal Physics UB of RAS

Email: telegin@imp.uran.ru
ORCID iD: 0009-0004-5667-7616

Leading Electronics Engineer

Russian Federation, Ekaterinburg

V. M. Tsvelikhovskaya

M.N. Mikheev Institute of Metal Physics UB of RAS

Email: telegin@imp.uran.ru
ORCID iD: 0009-0000-4959-5701

Junior Researcher

Russian Federation, Ekaterinburg

Zh. Z Namsaraev

Far Eastern Federal University

Email: telegin@imp.uran.ru
ORCID iD: 0009-0004-1064-7948

Research Engineer

Russian Federation, Vladivostok

V. A. Antonov

Far Eastern Federal University

Email: telegin@imp.uran.ru
ORCID iD: 0009-0001-0015-2413

Research Engineer

Russian Federation, Vladivostok

A. V. Ognev

Sakhalin State University

Email: telegin@imp.uran.ru
ORCID iD: 0000-0002-1619-3666

Doct. of Sci. (Physics and Mathematics), Prof., Deputy Rector

Russian Federation, Yuzhno-Sakhalinsk

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Supplementary files

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2. Fig.1. An example of conductive Hall structures grown on thin-film samples (on the left) and an example of a final chip release (on the right)

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3. Fig.2. a – schematic diagram of the mutual orientation of magnetization in two sublattices MCo and MTb, polarization of the spin current p, external field Bx and induced effective field BS; b – schematic representation of the experiment on current-induced magnetization reversal of a magnetically ordered layer

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4. Fig.3. Switching of magnetization of FIM sublattices under the action of spin current: а – predominance of the contribution of the FM sublattice, b – compensation state, с – predominance of the contribution of the RE sublattice

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5. Fig.4. Diagrams of switching of magnetization M under the action of spin current J for FIM (a) and FM (b). Switching time is given in color scale, where gray color indicates absence of switching

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6. Fig.5. Switching of the z-component of the magnetization of the FIM sublattices under the action of spin current: a – dominance of the FM sublattice, b – compensation state, с – dominance of the RE sublattice

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7. Fig.6. Change in the speed of current-induced motion of the skyrmion n at different values of current density J

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8. Fig.7. Time of stabilization of the speed of movement of a skyrmion depending on the current density

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Copyright (c) 2024 Telegin A.V., Pavlov T.N., Tsvelikhovskaya V.M., Namsaraev Z.Z., Antonov V.A., Ognev A.V.