High-sensitive magnetic field transducer based on spin-tunnel magnetoresistive nanostructures with synthetic antiferromagnet
- Authors: Vasilyev D.V.1, Saurov A.N.2, Amelichev V.V.1
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Affiliations:
- Scientific-manufacturing complex "Technological centre"
- Institute of Nanotechnology of Microelectronics of the Russian Academy of Sciences
- Issue: Vol 18, No 1 (2025)
- Pages: 60-69
- Section: Equipment for Nanoindustry
- URL: https://journals.eco-vector.com/1993-8578/article/view/679893
- DOI: https://doi.org/10.22184/1993-8578.2025.18.1.60.69
- ID: 679893
Cite item
Abstract
The results of a study of mock-ups of magnetic field transducers (MFT) based on spin-tunnel magnetoresistive nanostructures (STMR) with a synthetic antiferromagnet (SAF) are presented. The absolute sensitivity to the magnetic field of the studied MFT-SAF mock-ups was 217 mV/Oe in the magnetic field range ±5 Oe (±0.5 mT) at a supply voltage of 5 V.
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About the authors
D. V. Vasilyev
Scientific-manufacturing complex "Technological centre"
Email: V.Amelichev@tcen.ru
ORCID iD: 0000-0001-6568-5301
Head of Laboratory
Russian Federation, MoscowA. N. Saurov
Institute of Nanotechnology of Microelectronics of the Russian Academy of Sciences
Email: V.Amelichev@tcen.ru
Doct. of Sci. (Tech), Prof., Academician of RAS, Director
Russian Federation, MoscowV. V. Amelichev
Scientific-manufacturing complex "Technological centre"
Author for correspondence.
Email: V.Amelichev@tcen.ru
ORCID iD: 0000-0002-4204-2626
Cand. of Sci. (Tech), Head of Department
Russian Federation, MoscowReferences
- Djayaprawiraa D.D., Tsunekawa K., Nagai M. et al. 230% room-temperature magnetoresistance in CoFeB / MgO / CoFeB magnetic tunnel junctions / // Applied Physics Letters. 2005. Vol. 86. P. 092502.
- Dieny B., Goldfarb R.B., Lee. K.-J. Introduction to magnetic random-access memory // IEEE Magnetics. 2017. 255 p.
- Ikeda S., Hayakawa J., Ashizawa Y. et al. Tunnel magnetoresistance of 604% at 300 K by suppression of Ta diffusion in CoFeB / MgO / CoFeB pseudo-spin-valves annealed at high temperature // Applied Physics Letters. 2008. Vol. 93. P. 082508.
- Lee Y.M., Hayakawa J., Ikeda S. et al. Giant tunnel magnetoresistance and high annealing stability in CoFeB / MgO / CoFeB magnetic tunnel junctions with synthetic pinned layer // Applied Physics Letters. 2006. Vol. 89. P. 042506.
- Vidal E.G., Muñoz D.R., Arias S.I.R. et al. Electronic energy meter based on a tunnel magnetoresistive effect (TMR) current sensor // Materials. 2017. Vol. 10. P. 1134.
- Valadeiro J.P., Leitão J.A., Ferreira D.C. et al. Strategies for pTesla field detection using magnetoresistive sensors with a soft pinned sensing layer" // IEEE Transactions on Magnetics. 2015. Vol. 51. No. 1. P. 4400204.
- Ferreira R., Paz E., Freitas P.P. et al. Large area and low aspect ratio linear magnetic tunnel junctions with a soft-pinned sensing layer // IEEE Transactions on Magnetics. 2012. Vol. 48. No. 11. PP. 3719–3722.
- Наумова Л.И., Миляев М.А., Чернышова Т.А. и др. Безгистерезисные спиновые клапаны с синтетическим антиферромагнетиком и управляемой магниторезистивной чувствительностью // Естественные и технические науки. 2015. № 10(80). С. 92–96.
- Freitas P.P., Ferreira R., Cardoso S. Spintronic Sensors // Proceedings of the IEEE. 2016. Vol. 104. No. 10. PP. 1894–1918.
- Чернышова Т.А., Миляев М.А., Наумова Л.И. и др. Магниторезистивная чувствительность и одноосная анизотропия микрополосок спиновых клапанов с синтетическим антиферромагнетиком // Физика металлов и металловедение. 2017. Т. 118. № 5. С. 439–445.
- Silva A.V., Leitao D.C., Valadeiro J. et al. Linearization strategies for high sensitivity magnetoresistive sensors // The European Physical Journal Applied Physics. 2015. Vol. 72. P. 10601.
- Амеличев В.В., Аравин В.В., Белов А.Н. и др. Создание интегральных компонентов усиления магнитного сигнала в беспроводной МЭМС на основе магниторезистивных элементов // Нано- и микросистемная техника. 2013. № 3. С. 29–33.
- Патент 2568148. Российская Федерация, МПК H01L 43/00 (2006.01). Магниторезистивный преобразователь: № 2014133072/28: заявл. 12.08.2014: опубл. 10.11.2015 / И.Е. Абанин, В.В. Амеличев, В.В. Аравин и др. 5 c.
- Электронный ресурс: Материалы сайта компании "MultiDimension Technology Co., Ltd". www.dowaytech.com (Дата обращения: 30.10.2024).
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