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<article xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xmlns:ali="http://www.niso.org/schemas/ali/1.0/" article-type="other" dtd-version="1.2" xml:lang="ru"><front><journal-meta><journal-id journal-id-type="publisher-id">Izvestiya MGTU MAMI</journal-id><journal-title-group><journal-title xml:lang="en">Izvestiya MGTU MAMI</journal-title><trans-title-group xml:lang="ru"><trans-title>Известия МГТУ “МАМИ“</trans-title></trans-title-group></journal-title-group><issn publication-format="print">2074-0530</issn><issn publication-format="electronic">2949-1428</issn><publisher><publisher-name xml:lang="en">Moscow Polytechnic University</publisher-name></publisher></journal-meta><article-meta><article-id pub-id-type="publisher-id">70008</article-id><article-id pub-id-type="doi">10.17816/2074-0530-70008</article-id><article-categories><subj-group subj-group-type="toc-heading" xml:lang="en"><subject>Articles</subject></subj-group><subj-group subj-group-type="toc-heading" xml:lang="ru"><subject>Статьи</subject></subj-group><subj-group subj-group-type="article-type"><subject></subject></subj-group></article-categories><title-group><article-title xml:lang="en">The Films with Low Dielectric Permittivity on the Basis of Lyotropic Liquid Crystals</article-title><trans-title-group xml:lang="ru"><trans-title>Плёнки с низкой диэлектрической проницаемостью на базе лиотропных жидких кристаллов</trans-title></trans-title-group></title-group><contrib-group><contrib contrib-type="author"><name-alternatives><name xml:lang="en"><surname>Sonin</surname><given-names>A A</given-names></name><name xml:lang="ru"><surname>Сонин</surname><given-names>А А</given-names></name></name-alternatives><bio xml:lang="en"><p>MSTU MAMI</p></bio><bio xml:lang="ru"><p>+7-495-223-05-23 доб. 13-64; МГТУ «МАМИ»</p></bio><xref ref-type="aff" rid="aff1"/></contrib></contrib-group><aff-alternatives id="aff1"><aff><institution xml:lang="en">MSTU MAMI</institution></aff><aff><institution xml:lang="ru">МГТУ «МАМИ»</institution></aff></aff-alternatives><pub-date date-type="pub" publication-format="electronic" iso-8601-date="2009-01-10"><day>10</day><month>01</month><year>2009</year></pub-date><pub-date date-type="collection"><year>2009</year></pub-date><volume>3</volume><issue>1</issue><issue-title xml:lang="en">NO1 (2009)</issue-title><issue-title xml:lang="ru">ТОМ 1, №1 (2009)</issue-title><fpage>185</fpage><lpage>192</lpage><history><date date-type="received" iso-8601-date="2021-04-30"><day>30</day><month>04</month><year>2021</year></date></history><pub-history><event event-type="received"><event-desc>Received:<date date-type="received" iso-8601-date="2021-04-30"><day>30</day><month>04</month><year>2021</year></date></event-desc></event><event event-type="pub"><event-desc>Published:<pub-date date-type="pub" publication-format="electronic" iso-8601-date="2009-01-10"><day>10</day><month>01</month><year>2009</year></pub-date></event-desc></event></pub-history><permissions><copyright-statement xml:lang="en">Copyright ©; 2009, Sonin A.A.</copyright-statement><copyright-statement xml:lang="ru">Copyright ©; 2009, Сонин А.А.</copyright-statement><copyright-year>2009</copyright-year><copyright-holder xml:lang="en">Sonin A.A.</copyright-holder><copyright-holder xml:lang="ru">Сонин А.А.</copyright-holder><ali:free_to_read xmlns:ali="http://www.niso.org/schemas/ali/1.0/"/><license><ali:license_ref xmlns:ali="http://www.niso.org/schemas/ali/1.0/">https://creativecommons.org/licenses/by-nc-nd/4.0</ali:license_ref></license></permissions><self-uri xlink:href="https://journals.eco-vector.com/2074-0530/article/view/70008">https://journals.eco-vector.com/2074-0530/article/view/70008</self-uri><abstract xml:lang="en"><p>The possibility of preparation of solid porous films with low dielectric constant for use in nanoelectronics was demonstrated on example of the CTAB/TEOS/NaSal and CTAB/TEOS/TCS-2 novel precursor solutions. The dielectric constant and mechanical modules of these films were measured. The possibility of use of supercritical CO2 for improvement of the film characteristics was shown.</p></abstract><trans-abstract xml:lang="ru"><p>На примере оригинальных прекурсионных растворов ЦТАБ/ТЭОС/NaSal и ЦТАБ/ТЭОС/TCS-2 продемонстрирована возможность создания твёрдых пористых плёнок с низкой диэлектрической проницаемостью для применений в наноэлектронике. Измерены их диэлектрические проницаемости и механические модули. Показана возможность использования сверхкритического CO2 для улучшения характеристик этих плёнок.</p></trans-abstract><kwd-group xml:lang="en"><kwd>dielectric constant</kwd><kwd>insulating gap</kwd><kwd>electric signal propagation velocity</kwd><kwd>percussion solution</kwd><kwd>hexamethyldisilazane</kwd></kwd-group><kwd-group xml:lang="ru"><kwd>диэлектрическая проницаемость</kwd><kwd>изоляционная прослойка</kwd><kwd>скорость распространения электрического сигнала</kwd><kwd>перкуссионный раствор</kwd><kwd>гексаметилдисилазан</kwd></kwd-group></article-meta></front><body></body><back><ref-list><ref id="B1"><label>1.</label><mixed-citation>K. Maex, M.R. Baklanov, D. Shamiryan, F. Iacopi, S.H. Brongersma, Z.S. Yanovitskaya, J. Appl. Phys., 2003, 93, 8793.</mixed-citation></ref><ref id="B2"><label>2.</label><mixed-citation>C.T. Kresge, M.E. Leonowicz, W.J. Roth, J.C. Vartulli, J.S. Beck, Nature, 1992, 359, 710.</mixed-citation></ref><ref id="B3"><label>3.</label><mixed-citation>H. Fan, S. 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