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<article xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xmlns:ali="http://www.niso.org/schemas/ali/1.0/" article-type="research-article" dtd-version="1.2" xml:lang="en"><front><journal-meta><journal-id journal-id-type="publisher-id">Computational nanotechnology</journal-id><journal-title-group><journal-title xml:lang="en">Computational nanotechnology</journal-title><trans-title-group xml:lang="kk"><trans-title>Computational nanotechnology</trans-title></trans-title-group><trans-title-group xml:lang="pt"><trans-title>Computational nanotechnology</trans-title></trans-title-group><trans-title-group xml:lang="ru"><trans-title>Computational nanotechnology</trans-title></trans-title-group><trans-title-group xml:lang="zh"><trans-title>Computational nanotechnology</trans-title></trans-title-group></journal-title-group><issn publication-format="print">2313-223X</issn><issn publication-format="electronic">2587-9693</issn><publisher><publisher-name xml:lang="en">YUR-VAK</publisher-name></publisher></journal-meta><article-meta><article-id pub-id-type="publisher-id">529759</article-id><article-id pub-id-type="doi">10.33693/2313-223X-2019-6-3-80-85</article-id><article-categories><subj-group subj-group-type="toc-heading" xml:lang="en"><subject>Articles</subject></subj-group><subj-group subj-group-type="toc-heading" xml:lang="ru"><subject>Статьи</subject></subj-group><subj-group subj-group-type="article-type"><subject>Research Article</subject></subj-group></article-categories><title-group><article-title xml:lang="en">FULL-ELECTRON ORBITAL-FREE MODELING METHOD FOR ATOMIC SYSTEMS: THE FIRST STEP</article-title><trans-title-group xml:lang="ru"><trans-title>ПОЛНОЭЛЕКТРОННЫЙ БЕЗОРБИТАЛЬНЫЙ МЕТОД МОДЕЛИРОВАНИЯ АТОМНЫХ СИСТЕМ: ПЕРВЫЙ ШАГ</trans-title></trans-title-group></title-group><contrib-group><contrib contrib-type="author"><name-alternatives><name xml:lang="en"><surname>Zavodinsky</surname><given-names>Victor Grigor’evich</given-names></name><name xml:lang="ru"><surname>Заводинский</surname><given-names>Виктор Григорьевич</given-names></name></name-alternatives><bio xml:lang="en"><p>Ph.D, professor; leader-researcher</p></bio><bio xml:lang="ru"><p>доктор физико-математических наук, профессор; ведущий научный сотрудник</p></bio><email>vzavod@mail.ru</email><xref ref-type="aff" rid="aff1"/></contrib><contrib contrib-type="author"><name-alternatives><name xml:lang="en"><surname>Gorkusha</surname><given-names>Olga Alexandrovna</given-names></name><name xml:lang="ru"><surname>Горкуша</surname><given-names>Ольга Александровна</given-names></name></name-alternatives><bio xml:lang="en"><p>Ph.D, doctor; senior researcher</p></bio><bio xml:lang="ru"><p>кандидат физико-математических наук; старший научный сотрудник</p></bio><email>o_garok@rambler.ru</email><xref ref-type="aff" rid="aff2"/></contrib></contrib-group><aff-alternatives id="aff1"><aff><institution xml:lang="en">Institute for Materials Science of the Russian Academy of Sciences</institution></aff><aff><institution xml:lang="ru">Институт материаловедения ХНЦ ДВО РАН</institution></aff></aff-alternatives><aff-alternatives id="aff2"><aff><institution xml:lang="en">Khabarovsk Department of Institute of Applied Mathematics of the Russian Academy of Sciences</institution></aff><aff><institution xml:lang="ru">Институт прикладной математики ДВО РАН, Хабаровское отделение</institution></aff></aff-alternatives><pub-date date-type="pub" iso-8601-date="2019-09-15" publication-format="electronic"><day>15</day><month>09</month><year>2019</year></pub-date><volume>6</volume><issue>3</issue><issue-title xml:lang="en">NO3 (2019)</issue-title><issue-title xml:lang="ru">№3 (2019)</issue-title><fpage>80</fpage><lpage>85</lpage><history><date date-type="received" iso-8601-date="2023-07-05"><day>05</day><month>07</month><year>2023</year></date></history><permissions><copyright-statement xml:lang="en">Copyright ©; 2019, Yur-VAK</copyright-statement><copyright-statement xml:lang="ru">Copyright ©; 2019, Юр-ВАК</copyright-statement><copyright-year>2019</copyright-year><copyright-holder xml:lang="en">Yur-VAK</copyright-holder><copyright-holder xml:lang="ru">Юр-ВАК</copyright-holder><ali:free_to_read xmlns:ali="http://www.niso.org/schemas/ali/1.0/"/><license><ali:license_ref xmlns:ali="http://www.niso.org/schemas/ali/1.0/">https://journals.eco-vector.com/2313-223X/about/editorialPolicies</ali:license_ref></license></permissions><self-uri xlink:href="https://journals.eco-vector.com/2313-223X/article/view/529759">https://journals.eco-vector.com/2313-223X/article/view/529759</self-uri><abstract xml:lang="en"><p>We studied an opportunity to develop a full-potential orbital-free method for modeling of multi-atomic systems using results of Kohn-Sham calculations for single atoms. We have obtained equilibrium bond lengths and binding energies for dimers Li2, Be2, B2, C2, N2, O2, F2, Na2, Mg2, Al2, Si2, P2, S2 &amp; Cl2, as well as for C3, C24 and C60 systems in good accordance to other theoretical and experimental data.</p></abstract><trans-abstract xml:lang="ru"><p>Мы изучили возможность разработки полноэлектронного безорбитального метода моделирования многоатомных систем с использованием результатов расчетов Кона-Шэма для одиночных атомов. Мы получили величины равновесных длин связи и энергии связи для димеров Li2, Be2, B2, C2, N2, O2, F2, Na2, Mg2, Al2, Si2, P2, S2 и Cl2, а также для систем C3, C24 и C60 в хорошем соответствии с другими теоретическими и экспериментальными данными.</p></trans-abstract><kwd-group xml:lang="ru"><kwd>квантовое моделирование</kwd><kwd>теория функционала плотности</kwd><kwd>безорбитальный подход</kwd><kwd>кинетический функционал</kwd></kwd-group></article-meta></front><body></body><back><ref-list><ref id="B1"><label>1.</label><mixed-citation>Hohenberg H., Kohn W. Inhomogeneous Electron Gas // Physical Review. 1964. № 136. Р. B864-B871.</mixed-citation></ref><ref id="B2"><label>2.</label><mixed-citation>Perdew J.P., Zunger A.S. Self-interaction correction to density functional approximation for many-electron systems // Physical Review. 1981. № 23. Р. 5048-5079.</mixed-citation></ref><ref id="B3"><label>3.</label><mixed-citation>Ceperley D.M., Alder B.J. 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