Radiation Formation of Interlayer Bridges in Bilayer Graphene
- Authors: Podlivaev A.I1
-
Affiliations:
- National Research Nuclear University MEPhI (Moscow Engineering Physics Institute)
- Issue: Vol 117, No 5-6 (3) (2023)
- Pages: 456-463
- Section: Articles
- URL: https://journals.eco-vector.com/0370-274X/article/view/662560
- DOI: https://doi.org/10.31857/S1234567823060101
- EDN: https://elibrary.ru/QTIZWU
- ID: 662560
Cite item
Abstract
The radiation formation of interlayer bridges in bilayer graphene has been studied with the nonorthogonal tight binding model. It has been shown that most (~85%) of the formed bridges have a low thermal stability excluding their application in elements of graphene electronics working at room temperature. Three types of stable bridges with the annealing activation energies of 1.50, 1.52, and 2.44 eV have been revealed. Estimates by the Arrhenius formula have shown that these bridge types have macroscopic lifetime at room temperature. It has been found that the radiation formation of bridges in bilayer graphene significantly differs from a similar process in graphite.
About the authors
A. I Podlivaev
National Research Nuclear University MEPhI (Moscow Engineering Physics Institute)
Author for correspondence.
Email: aipodlivayev@mephi.ru
115409, Moscow, Russia
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