Email this article Design features of heterostructures for construction of GaN normally-off transistors for power monolithic integrated circuits
- Authors: Tsarik K.A.1, Chukanova O.B.1, Kozlovskaya E.A.1
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Affiliations:
- National Research University of Electronic Technology
- Issue: Vol 16, No 1 (2023)
- Pages: 70-79
- Section: Equipment for Nanoindustry
- URL: https://journals.eco-vector.com/1993-8578/article/view/626964
- DOI: https://doi.org/10.22184/1993-8578.2023.16.1.70.79
- ID: 626964
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Abstract
This paper considers the key dependencies of characteristics of the normally-off transistors on GaN heterostructures parameters. Thicknesses and concentrations of dopants in the layers of the heterostructure are determined. As a result of the simulation, the current-voltage characteristics of a p-channel field-effect transistor and an n-channel transistor with a p-type gate layer were obtained.
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About the authors
K. A. Tsarik
National Research University of Electronic Technology
Email: kukhtuaeva@mail.ru
ORCID iD: 0000-0002-8218-7774
Cand. of Sci. (Tech), Head of Laboratory
Russian Federation, MoscowO. B. Chukanova
National Research University of Electronic Technology
Author for correspondence.
Email: kukhtuaeva@mail.ru
ORCID iD: 0000-0001-5726-630X
Engineer
Russian Federation, MoscowE. A. Kozlovskaya
National Research University of Electronic Technology
Email: kukhtuaeva@mail.ru
ORCID iD: 0000-0003-0235-3101
Engineer
Russian Federation, MoscowReferences
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Supplementary files
Supplementary Files
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Fig.1. Schematic image of the considered transistor
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Fig.2. Conduction band bottom and Fermi level in the structure in the field under the gate
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Fig.3. Influence of barrier layer parameters – barrier layer thickness tb thickness and Al mole fraction x(Al) mole fraction – on device type.
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Fig.4. Dependence of the transistor drain current Id at 3,5 V on the gate (solid line, right y-axis) and dependence of the threshold voltage Vth (dashed, left y-axis) on the barrier layer thickness tb
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Fig.5. Dependence of the transistor drain current Id at 3,5 V on the gate (solid line, right y axis) and dependence of the threshold voltage Vth (dashed, left y axis) on the mole fraction of Al in the barrier layer tb
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Fig.6. Dependence of the carrier concentration in the channel on the thickness of the AlN spacer layer
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Fig.7. Schematic representation of a complementary pair based on GaN transistors under development
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Fig.8. Influence of the channel layer parameters - its thickness tp and impurity concentration Np in it - on the type of p-channel transistor. I – normally-on devices, II – normally-off and III - area where both transistors are normally-off
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Fig.9. Current-voltage characteristics of the considered transistors: p-channel FET (left) and n-channel p-gate transistor (right)
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