NANOSCALE FERROELECTRIC FILM – A NEW ACTIVE MEDIUM FOR MICROELECTRONICS

Мұқаба

Дәйексөз келтіру

Толық мәтін

Ашық рұқсат Ашық рұқсат
Рұқсат жабық Рұқсат берілді
Рұқсат жабық Рұқсат ақылы немесе тек жазылушылар үшін

Аннотация

The results of interdisciplinary studies of ferroelectric heterostructures obtained using a fundamentally new technology developed in the Laboratory of Physics of Thin Ferroelectric Films of the Southern Scientific Centre of the Russian Academy of Sciences (SSC RAS) are presented. The heterostructures of complex oxides obtained by this technology significantly exceed the best foreign samples in terms of structural perfection and dielectric properties. A comprehensive study of the heterostructures of complex oxides (methods of X-ray diffraction analysis, studies of dielectric characteristics, studies of second harmonic generation, raman spectroscopy, high-resolution electron microscopy) allowed us to identify the main features of the use of such a new active medium in microwave microelectronics, optical range, in devices on surface acoustic waves, in micro-sensors, as well as to develop and create prototypes at the SSC RAS. The region of the most optimal film thicknesses for use in microwave control devices is between 25 and 50 nm. This area is characterized by a maximum controllability coefficient and minimal dielectric losses. Moreover, the methods of X-ray diffraction analysis make it possible to unambiguously determine the mechanism of film growth and establish the expected controllability coefficient. A micro-sensor developed at the SSC RAS based on nanoscale ferroelectric heterostructures with a threshold sensitivity of Δl/l ≈ 10−9... 10−10 and operating in the frequency range 10−4... 107 Hz will make it possible to create diagnostic systems for complex mechanical systems in the shortest possible time. It is shown that when using a thin ferroelectric film as an active element in a device on surface acoustic waves, it is possible to double the operating frequency of the converter due to the formation of a periodic domain structure in the film, which is a photonic crystal. By changing the external polarizing voltage on the film electrodes, converters with an electrically adjustable electromechanical coupling coefficient can be created.

Авторлар туралы

V. Mukhortov

Federal Research Centre the Southern Scientific Centre of the Russian Academy of Sciences

Email: mukhortov1944@mail.ru
Rostov-on-Don, Russian Federation

Yu. Golovko

Federal Research Centre the Southern Scientific Centre of the Russian Academy of Sciences

Rostov-on-Don, Russian Federation

S. Biryukov

Federal Research Centre the Southern Scientific Centre of the Russian Academy of Sciences

Rostov-on-Don, Russian Federation

S. Masychev

Federal Research Centre the Southern Scientific Centre of the Russian Academy of Sciences

Rostov-on-Don, Russian Federation

A. Pavlenko

Federal Research Centre the Southern Scientific Centre of the Russian Academy of Sciences

Rostov-on-Don, Russian Federation

D. Stryukov

Federal Research Centre the Southern Scientific Centre of the Russian Academy of Sciences

Rostov-on-Don, Russian Federation

S. Zinchenko

Federal Research Centre the Southern Scientific Centre of the Russian Academy of Sciences

Rostov-on-Don, Russian Federation

A. Kovtun

Federal Research Centre the Southern Scientific Centre of the Russian Academy of Sciences

Rostov-on-Don, Russian Federation

G. Tolmachev

Federal Research Centre the Southern Scientific Centre of the Russian Academy of Sciences

Rostov-on-Don, Russian Federation

Әдебиет тізімі

  1. Мухортов В.М., Юзюк Ю.И. 2008. Гетероструктуры на основе наноразмерных сегнетоэлектрических пленок: получение, свойства и применение. Ростов н/Д, изд-во ЮНЦ РАН: 224 с.
  2. Мухортов В.М., Головко Ю.И., Маматов А.А., Жигалина О.М., Кускова А.Н., Чувилин А.Л. 2010. Влияние внутренних деформационных полей на управляемость наноразмерных сегнетоэлектрических пленок в планарном конденсаторе. ЖТФ. 80(3): 77–82.
  3. Мухортов В.М., Головко Ю.И., Бирюков С.В., Анохин А., Юзюк Ю.И. 2016. Влияние механизмов роста на деформацию элементарной ячейки и переключение поляризации в гетероструктурах титаната бария–стронция на оксиде магния. ЖТФ. 86(1): 93–98.
  4. Анохин А.С., Разумная А.Г., Юзюк Ю.И., Головко Ю.И., Мухортов В.М. 2016. Фазовые переходы в пленках титаната бария-стронция на подложках MgO различной ориентации. ФТТ. 58(10): 1956–1963.
  5. Анохин А.С., Головко Ю.И., Мухортов В.М., Стрюков Д.В. 2019. Структура и динамика решетки двухслойных гетероструктур титаната бария-стронция и слоистого титаната висмута разной толщины на подложке окcида магния. ФТТ. 61(11): 2178–2182. doi: 10.21883/FTT.2019.11.48425.489
  6. Mishina E., Grishunin K., Bilyk V., Sherstyuk N., Sigov A., Mukhortov V., Ovchinnikov A., Kimel A. 2018. Ultrafast polarization switching of (BaSr)TiO3 thin film by a single-period terahertz pulse in a vicinity of phase transition. Ferroelectrics. 532(1): 199–207. doi: 10.1080/00150193.2018.1499405
  7. Стрюков Д.В., Мухортов В.М., Головко Ю.И., Бирюков С.В. 2018. Особенности сегнетоэлектрического состояния в двухслойных гетероструктурах на основе титаната бария-стронция. ФТТ. 60(1): 113–117. doi: 10.21883/FTT.2018.01.45297.186
  8. Mukhortov V.M., Golovko Yu.I., Zelenchuk P.A., Yuzyuk Yu.I. 2009. Barium-strotium titanate based ferroelectric heterostructures. Integrated Ferroelectrics. 107(1): 83–91. doi: 10.1080/10584580903324733
  9. Мухортов В.М., Головко Ю.И., Павленко А.В., Стрюков Д.В., Бирюков С.В., Ковтун А.П., Зинченко С.П. 2018. Особенности эффекта поля в структуре металл-сегнетоэлектрик-полупроводник при использовании многослойных сегнетоэлектрических пленок с различными структурными типами. ФТТ. 60(9): 1741–1747. doi: 10.21883/FTT.2018.09.46392.014
  10. Бирюков С.В., Головко Ю.И., Масычев С.И., Мухортов В.М. 2016. Преобразователи поверхностных акустических волн с электрически регулируемой чувствительностью. Наука Юга России. 12(1): 11–15.

Қосымша файлдар

Қосымша файлдар
Әрекет
1. JATS XML

© Издательство «Наука», 2022

Осы сайт cookie-файлдарды пайдаланады

Біздің сайтты пайдалануды жалғастыра отырып, сіз сайттың дұрыс жұмыс істеуін қамтамасыз ететін cookie файлдарын өңдеуге келісім бересіз.< / br>< / br>cookie файлдары туралы< / a>