Plasma-Enhanced Chemical Vapor Deposition of Thin GaS Films on Various Types of Substrates

M. A. Kudryashov; Кудряшов М. А.; L. A. Mochalov; Мочалов Л. А.; I. O. Prokhorov; Прохоров И. О.; M. A. Vshivtsev; Вшивцев М. А.; Yu. P. Kudryashova; Кудряшова Ю. П.; V. M. Malyshev; Малышев В. М.; E. A. Slapovskaya; Слаповская Е. А.

doi:10.31857/S0023119323060098

Plasma-Enhanced Chemical Vapor Deposition of Thin GaS Films on Various Types of Substrates

Авторлар: Kudryashov M.A.¹^,2, Mochalov L.A.¹^,2, Prokhorov I.O.¹^,2, Vshivtsev M.A.¹, Kudryashova Y.P.², Malyshev V.M.¹, Slapovskaya E.A.²
Мекемелер:
1. Nizhny Novgorod State Technical University
2. Lobachevsky State University of Nizhny Novgorod
Шығарылым: Том 57, № 6 (2023)
Беттер: 495-499
Бөлім: PLASMA CHEMISTRY
URL: https://journals.eco-vector.com/0023-1193/article/view/661470
DOI: https://doi.org/10.31857/S0023119323060098
EDN: https://elibrary.ru/RULDFW
ID: 661470

Дәйексөз келтіру

Толық мәтін

Ашық рұқсат
Рұқсат жабық

Рұқсат берілді
Рұқсат жабық

Тек жазылушылар үшін

Аннотация
Авторлар туралы
Әдебиет тізімі
Қосымша файлдар
Статистика

Аннотация

Gallium monosulfide (GaS), a representative of Group III monochalcogenide layered materials, is a wide-bandgap semiconductor. It is considered an ideal material for light detectors in the blue and near ultraviolet ranges of the spectrum. In this work, for the first time, the method of plasma-enhanced chemical vapor deposition (PECVD) was applied to obtain thin GaS films on various substrates, where high-purity gallium and sulfur served as starting materials. To initiate the interaction between the reactants, a nonequilibrium RF discharge (40.68 MHz) plasma at a pressure of 0.1 torr was used. The influence of the substrate nature on the stoichiometry, structure, and surface morphology of GaS films has been studied. The plasmachemical process was monitored using optical emission spectroscopy.

Негізгі сөздер

thin films, gallium monosulfide, PECVD

Әдебиет тізімі

Wang Q.H., Kalantar-Zadeh K., Kis A., Coleman J.N., Strano M.S. // Nat. Nanotechnol. 2012. V. 7. № 11. P. 699.
Jung C.S., Shojaei F., Park K., Oh J. Y., Im H.S., Jang D.M., Kang H.S. // ACS Nano. 2015. V. 9. № 10. P. 9585.
Haishuang L., Yu C., Kexin Y., Yawei K., Zhongguo L., Yushen L. // Front. Mater. 2021. V. 8. P. 478.
Cuculescu E., Evtodiev I., Caraman M., Rusu M. // J. Optoelectron. Adv. Mater. 2006. V. 8. № 3. P. 1077.
Okamoto N., Tanaka H. // Mater. Sci. Semicond. Process. 1999. V. 2. P. 13.
Jastrzebski C., Olkowska K., Jastrzebski D.J., Wierzbicki M., Gebicki W., Podsiadlo S. // J. Phys. Condens. Matter. 2018. V. 31. P. 075303.
Hu P., Wang L., Yoon M., Zhang J., Feng W., Wang X., Xiao K. // Nano Lett. 2013. V. 13. № 4. P. 1649.
Gutiérrez Y., Juan D., Dicorato S., Santos G., Duwe M., Thiesen P.H., Giangregorio M.M., Palumbo F., Hingerl K., Cobet C., García-Fernández P., Junquera J., Moreno F., Losurdo M. // Opt. Express. 2022. V. 30. № 15. P. 27609.
Lieth R.M.A., Van Der Maesen F. // Phys. status solidi A. 1972. V. 10. № 1. P. 73.
Kipperman A.H.M., Vermij C.J. // Nuovo cimento B. 1969. V. 63. P. 29.
Wang X., Sheng Y., Chang R.J., Lee J.K., Zhou Y., Li S., Warner J.H. // ACS Omega. 2018. V. 3. № 7. P. 7897.
Sanz C., Guillén C., Gutiérrez M.T. // J. Phys. D. 2009. V. 42. P. 085108.
Chen X., Hou X., Cao X., Ding X., Chen L., Zhao G., Wang X. // J. Cryst. Growth. 1997. V. 173. № 1. P. 51.
Okamoto N., Tanaka H., Hara N. // Jpn. J. Appl. Phys. 2001. V. 40. № 2. P. 104.
Mochalov L., Logunov A., Prokhorov I., Vshivtsev M., Kudryashov M., Kudryashova Y., Malyshev V., Spivak Y., Greshnyakov E., Knyazev A., Fukina D., Yunin P., Moshnikov V. // Opt. Quantum Electron. 2022. V. 54. P. 646.
Shirai T., Reader J., Kramida A.E., Sugar J. // J. Phys. Chem. Ref. Data. 2007. V. 36. № 2. P. 509.