Thin Au+Ge Film Growth on the GaAs Surface During the Process of Thermal Avaporation in Vacuum

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Abstract

The morphology and structure of thin films were studied during the deposition of Au+Ge on the GaAs surface by thermal evaporation in a vacuum in order to create metal-semiconductor contacts with a reduced barrier height. It was found that the addition of germanium to the evaporated sample ensures the formation of a layer, doped with donors and prevents the transformation of GaAs into a hexagonal structure.

About the authors

T. A. Bryantseva

Fryazino branch Kotelnikov Institute of Radio Engineering and Electronics of RAS

Vvedensky squar., 1, Fryazino, Moscow region, 141190 Russian Federation

V. E. Lyubchenko

Fryazino branch Kotelnikov Institute of Radio Engineering and Electronics of RAS

Email: lyubch@fireras.su
Vvedensky squar., 1, Fryazino, Moscow region, 141190 Russian Federation

I. A. Markov

Fryazino branch Kotelnikov Institute of Radio Engineering and Electronics of RAS

Vvedensky squar., 1, Fryazino, Moscow region, 141190 Russian Federation

Y. A. Ten

Fryazino branch Kotelnikov Institute of Radio Engineering and Electronics of RAS

Vvedensky squar., 1, Fryazino, Moscow region, 141190 Russian Federation

References

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