电邮这篇文章 Development of AMR converter mathematical model for implementation in CAD
- 作者: Cheplakov A.1, Litvinenko E.1
-
隶属关系:
- АО «ЗНТЦ»
- 期: 编号 3 (2024)
- 页面: 180-187
- 栏目: CAD / CAE
- URL: https://journals.eco-vector.com/1992-4178/article/view/631746
- DOI: https://doi.org/10.22184/1992-4178.2024.234.3.180.187
- ID: 631746
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The article discusses the operating principle and main characteristics of the AMR converter, the results of the development of its mathematical model and its implementation in Cadence Virtuoso CAD system are presented.
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作者简介
A. Cheplakov
АО «ЗНТЦ»
编辑信件的主要联系方式.
Email: cheplakov@zntc.ru
инженер
俄罗斯联邦E. Litvinenko
АО «ЗНТЦ»
Email: elitvinenko@zntc.ru
ведущий инженер
俄罗斯联邦参考
- Ritzinger P., Výborný K. Anisotropic magnetoresistance: materials, models and applications // Royal Society Open Science. 2023. No. 10.
- Trushin M., Výborný K. Anisotropic magnetoresistance of spin-orbit coupled carriers scattered from polarized magnetic impurities // Physical review. B, Condensed matter. 2009. V. 80. No. 13.
- Nie H.B., Xu S.Y., Ong C.K. Magnetic anisotropy and magnetoresistance of sputtered [(FeTaN)/(TaN)](n) multilayers // Journal of Applied Physics. 2003. V. 91. No. 10.
- Kostevšek N., Serša I. Characterization of metal-based nanoparticles as contrast agents for magnetic resonance imaging // Comprehensive Analytical Chemistry. 2021. V. 93. PP. 303–343.
- Tumański S. Thin film magnetoresistive sensors. First Edition. Bristol; Philadelphia: CRC Press, 2001. 576 p.
- Markevicius V., Cepenas M., Navikas D., Valinevicius A., Andriukaitis D. Research of Magnetic Field Influence on the Offset and Sensitivity of Magnetoresistive Sensor Readings // Elektronika ir Elektrotechnika. 2013. V. 19. No. 2. PP. 37–40.
- Mohamadabadi K., Jeandet A., Hillion M., Coillot C. Autocalibration Method for Anisotropic Magnetoresistive Sensors Using Offset Coils // IEEE Sensors Journal. 2013. V. 13. No. 2. PP. 772–776.
- Fúra V., Petrucha V., Platil A. Construction of an AMR magnetometer for car detection experiments // IOP Conference Series: Materials Science and Engineering. 2016. V. 108.
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Fig. 1. Magnetic configuration of the thin film after relaxation calculated in the micromagnetic approximation for different values of the external magnetic field strength Hext: a - Hext = 0; b - Hext = 0.1Ms; c - Hext = 0.2Ms; d - Hext = 0.3Ms
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Fig. 2. Field system of the Stoner-Wohlfahrt model (T and L axes denote the hard and easy anisotropy axes, respectively)
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Fig. 3. Bridge structure of the AMR sensor (a) and shunt strips on FM films (b)
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Fig. 4. Circular magnetic gender of a current-carrying busbar
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Fig. 5. Partitioning of the bus section into a set of infinitely thin conductors (a) and numerical simulation of the circular field (b). Here: P(x0, y0) is the point where the Hp field is calculated; lx, lz are the width and thickness of the conductor, respectively
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Fig. 6. Block diagram of the developed AMR-sensor model
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Fig. 7. Symbolic representation of AMR-sensor for Cadence Virtuoso CAD system
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Fig. 8. Dimensions of the body current-carrying busbar (a) and FM-films (b)
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Fig. 9. Comparison of transfer characteristics of model and real AMR converter in the linear domain
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Fig. 10. Transmission characteristic family of the AMR converter model at different values of current-carrier bus widths
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