Structural and optical properties of gallium sulfide thin films obtained by plasma-enhanced chemical vapor deposition

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Abstract

Gallium sulfides have a wide band gap in the range of 2.85–3.05 eV and are promising for use in the field of photovoltaics and optoelectronics, nonlinear optics, optoelectronics, terahertz devices, and also as the passivation layers in the group III–V semiconductor devices. In this paper, thin films of gallium sulfide GaxS1-x were obtained for the first time by the plasma-enhanced chemical vapor deposition (PECVD) using a chlorine-involved transport reaction, while the direct high-purity elements (Ga and S) were applied as the original substances. The nonequilibrium low-temperature plasma of an RF discharge (40.68 MHz) at a reduced pressure (0.01 Torr) was the initiator of chemical transformations. The dependences of composition, surface morphology, structural and optical properties of the obtained films on the plasma discharge power were studied.

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About the authors

L. A. Mochalov

Nizhny Novgorod State Technical University n. a.R. Alekseev; Lobachevsky University

Author for correspondence.
Email: journal@electronics.ru
ORCID iD: 0000-0002-7842-8563
Russian Federation, Nizhny Novgorod; Nizhny Novgorod

M. A. Kudryashov

Nizhny Novgorod State Technical University n. a.R. Alekseev; Lobachevsky University

Email: journal@electronics.ru
ORCID iD: 0000-0002-3090-1622
Russian Federation, Nizhny Novgorod; Nizhny Novgorod

M. A. Vshivtsev

Nizhny Novgorod State Technical University n. a.R. Alekseev

Email: journal@electronics.ru
Russian Federation, Nizhny Novgorod

I. O. Prokhorov

Nizhny Novgorod State Technical University n. a.R. Alekseev

Email: journal@electronics.ru
ORCID iD: 0009-0003-5180-5394
Russian Federation, Nizhny Novgorod

P. A. Yunin

Lobachevsky University

Email: journal@electronics.ru
ORCID iD: 0000-0001-7081-2934
Russian Federation, Nizhny Novgorod

T. S. Sazanova

Nizhny Novgorod State Technical University n. a.R. Alekseev

Email: journal@electronics.ru
ORCID iD: 0000-0003-2580-821X
Russian Federation, Nizhny Novgorod

Yu. P. Kudryashova

Lobachevsky University

Email: journal@electronics.ru
Russian Federation, Nizhny Novgorod

V. M. Malyshev

Nizhny Novgorod State Technical University n. a.R. Alekseev

Email: journal@electronics.ru
Russian Federation, Nizhny Novgorod

A. D. Kulikov

Nizhny Novgorod State Technical University n. a.R. Alekseev

Email: journal@electronics.ru
Russian Federation, Nizhny Novgorod

V. M. Vorotyntsev

Nizhny Novgorod State Technical University n. a.R. Alekseev; Lobachevsky University

Email: journal@electronics.ru
ORCID iD: 0000-0001-9451-937X
Russian Federation, Nizhny Novgorod; Nizhny Novgorod

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Supplementary files

Supplementary Files
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2. Fig. 1. Schematic layout of a plasma-chemical installation for the synthesis of gallium sulfide thin films

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3. Fig. 2. Emission spectra: a) of mixtures (1 – Ar-S; 2 – Ar-Cl2-Ga and 3 – Ar-H2-Cl2-Ga-S); b) of the Ar-H2-Cl2-Ga-S mixture (at 1 – 30 W, 2 – 70 W, 3 – 100 W)

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4. Fig. 3. X-ray diffraction pattern of gallium sulfide films with various compositions

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5. Fig. 4. AFM images of (a) Ga37S48Cl15, (b) Ga20S80, and (c) Ga38S62 films

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6. Fig. 5. Transmission spectra of gallium sulfide films with various compositions

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7. Fig. 6. Absorption spectra in the Tauc coordinates for gallium sulfide films with various compositions

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Copyright (c) 2023 Mochalov L.A., Kudryashov M.A., Vshivtsev M.A., Prokhorov I.O., Yunin P.A., Sazanova T.S., Kudryashova Y.P., Malyshev V.M., Kulikov A.D., Vorotyntsev V.M.

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