POLARIZATION SWITCHING FEATURES IN BISMUTH TITANATE FILMS WITH DIFFERENT DOMAIN STRUCTURE SPUTTERED ON A SILICON SUBSTRATE


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详细

The results of obtaining and studying of the structure and dielectric characteristics of layered bismuth titanate thin films with different orientation of crystallites relative to the (100)Si substrate have been presented. The (Ba, Sr)TiO3 is used as a sublayer. It has been found that, it is possible to obtain singlecrystal or textured films of layered bismuth titanate with different domain structures depending on the growth conditions and the chemical composition of the sublayer. Simultaneous measurement of the piezoresponse and capacitance-voltage characteristics made it possible to conclude that the field effect in the metal-ferroelectricsemiconductor structure is completely determined by the ferroelectric polarization due to the rearrangement of the domain structure under an external field action, and the effect of surface states is insignificant.

作者简介

V. Mukhortov

Federal Research Centre the Southern Scientific Centre of the Russian Academy of Sciences

Email: mukhortov1944@mail.ru
Rostov-on-Don, Russian Federation

Yu. Golovko

Federal Research Centre the Southern Scientific Centre of the Russian Academy of Sciences

Rostov-on-Don, Russian Federation

S. Biryukov

Federal Research Centre the Southern Scientific Centre of the Russian Academy of Sciences

Rostov-on-Don, Russian Federation

D. Stryukov

Federal Research Centre the Southern Scientific Centre of the Russian Academy of Sciences

Rostov-on-Don, Russian Federation

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