Antenna switches. Part 5

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详细

The article considers the antenna switches. Information is provided on the features and characteristics of various types of such devices produced by a number of manufacturers.

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作者简介

V. Kochemasov

ООО «Радиокомп»

编辑信件的主要联系方式.
Email: vkochemasov@radiocomp.ru

к. т. н.; генеральный директор

俄罗斯联邦

A. Safin

НИУ «МЭИ»

Email: arsafin@gmail.com

к. т. н., заведующий кафедрой формирования и обработки радиосигналов

俄罗斯联邦

S. Dinges

МТУСИ

Email: vkochemasov@radiocomp.ru

к. т. н.; доцент кафедры радиооборудования и схемотехники

俄罗斯联邦

参考

  1. Lee C.-H., Banerjee B., Laskar J. Novel T/R Switch Architectures for MIMO Applications. – 2004 IEEE MTT-S International Microwave Symposium Digest. PP. 1137–1140.

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2. Fig. 60. Schematic diagram of a 4-port switch with diversity function

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3. Fig. 61. Signal flow between four ports of the HMC393MS8G DPDT switch with diversity property

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4. Fig. 62. Schematic representation of DPDT switches made on SPST (a) and SPDT (b, c, d, e) structures in two positions: on the left – Tx is connected to Ant1, Rx is connected to Ant2; on the right – Tx is connected to Ant2, Rx is connected to Ant1

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5. Fig. 63. Rx/Tx switch implemented on three SPDT structures (model PSM-1G1R1G-TRSW-2500W, PMI company, model CMTRSW-1G1R1G-2K5, Corry Micronics company)

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6. Fig. 64. Design of modular DPDT switches: a – XFU1, Cobham; b – F940H, Kratos; c – P9400A, Keysight Technologies

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7. Fig. 65. Characteristics of the PE71S6287 modular DPDT switch: a – IL(f); b – Iso(f)

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8. Fig. 66. Schematic diagram of the F940H ring modular DPDT switch, made on four series-parallel pin-diode SPDT structures (blue background shows integrated components)

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9. Fig. 67. Simplified DPDT switch circuit using gallium arsenide field-effect transistors

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10. Fig. 68. Characteristics of the integrated DPDT switch FMS2017, made using GaAs PHEMT technology: a – IL(f); b – IL(Pin); c – IL(Vу)

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11. Fig. 69. Inserted attenuation IL(f) in the QPC6222 CMOS switch: a – depending on the signal path; b – at different temperatures

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12. Fig. 70. Iso(f) decoupling in the QPC6222 CMOS switch: a, b – between channels RF1, RF2, RF3 and RF4; c, d – at different temperatures

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13. Fig. 71. Compression powers P0.1 dB in switches СМD272P3 (a) and СМD273P3 (b) from Custom MMIC

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14. Fig. 72. IIP3 linearity indicators in CMD272P3 (a) and CMD273P3 (b) switches from Custom MMIC

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15. Fig. 73. Schematic diagrams of SP3T switches on pin diodes: a – common anode (MASW-011030); b – common cathode (MASW-011032)

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16. Fig. 74. Schematic diagram of a powerful SP6T switch MSW6T-6040-600 with a common cathode

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17. Fig. 75. Structure of the integrated gallium arsenide SP3T switch TQP4M3007, which provides reception/transmission of CDMA mobile communications signals together with the reception of GPS signals. MU - powerful amplifier, LNA - low noise amplifier

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18. Fig. 76. Simplified structure of the integrated gallium arsenide SP6T switch FMS2028 from Filtronic

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19. Fig. 77. Introduced attenuation in the transmitting (Tx1, Tx2) and receiving (Rx1, Rx2, Rx3, Rx4) channels of the 6-position gallium arsenide switch FMS2028 from Filtronic: a – in the transmitting and receiving channels; b – in transmission channels at different temperatures; c – in receiving channels at different temperatures

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20. Fig. 78. Isolation between channels in the gallium arsenide SP6T switch FMS2028: a – between transmitting and receiving channels when the transmitting channels are turned on; b – between transmitting channels with channels Tx1, Tx2 turned on

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21. Fig. 79. Characteristics of gallium arsenide SP3T switch RFSW6131 (Qorvo): a – IL(f) between different channels; b – IL(f) between RFc and RF1 at different temperatures; c, d – Iso(f) between different channels

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22. Fig. 80. Characteristics of IIP3(f) in the gallium arsenide SP3T switch RFSW6131: a – when connecting the second and third channels; b – when connecting the first channel and at different temperatures

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23. Fig. 81. Dependences of IL(Pin) in the gallium arsenide SP3T switch RFSW6131 at different temperatures and control voltages (the third channel is turned on)

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版权所有 © Kochemasov V., Safin A., Dinges S., 2023