电邮这篇文章 Antenna switches. Part 6
- 作者: Kochemasov V.1, Safin A.2, Dinges S.3
-
隶属关系:
- ООО «Радиокомп»
- НИУ «МЭИ»
- МТУСИ
- 期: 编号 2 (2023)
- 页面: 120-133
- 栏目: Microwave electronics
- URL: https://journals.eco-vector.com/1992-4178/article/view/629298
- DOI: https://doi.org/10.22184/1992-4178.2023.223.2.120.133
- ID: 629298
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详细
The article considers the antenna switches. Information is provided on the features and characteristics of various types of such devices produced by a number of manufacturers.
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作者简介
V. Kochemasov
ООО «Радиокомп»
编辑信件的主要联系方式.
Email: vkochemasov@radiocomp.ru
к. т. н., генеральный директор
俄罗斯联邦A. Safin
НИУ «МЭИ»
Email: arsafin@gmail.com
к. т. н., заведующий кафедрой формирования и обработки радиосигналов
俄罗斯联邦S. Dinges
МТУСИ
Email: vkochemasov@radiocomp.ru
к. т. н., доцент кафедры радиооборудования и схемотехники
俄罗斯联邦补充文件
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Fig.82. Characteristics of the integrated gallium nitride SP3T switch QPC1006 with the first channel turned on: a – IL(f) at different temperatures; b – IL(f) at different control voltages; c – Iso(f) at different temperatures; d – Iso(f) at different control voltages
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Fig.83. Inserted attenuation IL(Pin) in the first channel of the gallium nitride SP3T switch QPC1006: a – continuous mode; b, c, d – pulse mode (Ti = 100 μs, Q = 10%)
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Fig.84. A simplified diagram of a 16-channel CMOS switch SKY13492-21, to the ports of which 14 transceivers and two GSM transmitters are connected
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Fig.85. Block diagram of the RF1196 multi-position CMOS switch (Qorvo company)
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Fig.86. Inserted attenuation IL(f): a–c – in various channels of the 10-position CMOS switch SKY13406-389LF (Skyworks Solutions): a – from the antenna to all transmitting channels; b – from the antenna to the GSM Tx LF port; c – from the antenna to the GSM Tx HF port; d – in the QPC6064 switch (Qorvo company) at different ambient temperatures
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Fig.87. Iso(f) isolation between channels in the CMOS SP10T switch SKY13406-389LF: a – between GSM Tx LB and all TRx ports; b – between GSM Tx HB and all TRx ports; c – between ports TRx1 and TRx4/5/6; d – between ports TRx2 and TRx4/5/6; d – between ports TRx3 and TRx5; e – between adjacent TRx ports
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Fig.88. Classic structure of pSemi multi-position switches (a) and two versions of channel switches (b, c)
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Fig.89. Dependences of IL(f) in the PE42542 microcircuit, made using SNS technology: a – between channels RFс and RFj (j = 1, 2, 3, 4); b – at different temperatures; c – at different supply voltages
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Fig.90. Dependences of Iso(f) between channels in the PE42542 switch: a – at different temperatures; b – at different supply voltages
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Fig.91. Dependence of maximum input power on frequency in a 4-position switch (PE42440) at various supply voltages
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Fig.92. Dependencies of Iso(f) in the ADRF5046 switch in various channels: a – between RFc and ports RF2, RF3, RF4, the RFc – RF1 channel is turned on; b – between RFc and ports RF1, RF3, RF4, the RFc – RF2 channel is enabled; c – between RFc and ports RF1, RF2, RF4, the RFc – RF3 channel is enabled; d – between RFc and ports RF1, RF2, RF3, the RFc – RF4 channel is enabled
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Fig.93. Dependence of compression power P0.1 dB(f): a – for different ambient temperatures; b – for different supply voltages. Tcorp. = 25 °C (ADRF5040, Analog Devices)
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Fig.94. Implementation on one chip of two multi-position switches providing the diversity property: a – DP8T = SP4T + SP4T (SKY13550–667LF, Skyworks Solutions); b – DP9T = SP4T + SP5T (RF1255, Qorvo company)
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