Email this article Antenna switches. Part 5
- Authors: Kochemasov V.1, Safin A.2, Dinges S.3
-
Affiliations:
- ООО «Радиокомп»
- НИУ «МЭИ»
- МТУСИ
- Issue: No 1 (222) (2023)
- Pages: 88-101
- Section: Microwave electronics
- URL: https://journals.eco-vector.com/1992-4178/article/view/628763
- DOI: https://doi.org/10.22184/1992-4178.2023.222.1.88.101
- ID: 628763
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Abstract
The article considers the antenna switches. Information is provided on the features and characteristics of various types of such devices produced by a number of manufacturers.
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About the authors
V. Kochemasov
ООО «Радиокомп»
Author for correspondence.
Email: vkochemasov@radiocomp.ru
к. т. н.; генеральный директор
Russian FederationA. Safin
НИУ «МЭИ»
Email: arsafin@gmail.com
к. т. н., заведующий кафедрой формирования и обработки радиосигналов
Russian FederationS. Dinges
МТУСИ
Email: vkochemasov@radiocomp.ru
к. т. н.; доцент кафедры радиооборудования и схемотехники
Russian FederationReferences
- Lee C.-H., Banerjee B., Laskar J. Novel T/R Switch Architectures for MIMO Applications. – 2004 IEEE MTT-S International Microwave Symposium Digest. PP. 1137–1140.
Supplementary files
Supplementary Files
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1.
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2.
Fig. 60. Schematic diagram of a 4-port switch with diversity function
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3.
Fig. 61. Signal flow between four ports of the HMC393MS8G DPDT switch with diversity property
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4.
Fig. 62. Schematic representation of DPDT switches made on SPST (a) and SPDT (b, c, d, e) structures in two positions: on the left – Tx is connected to Ant1, Rx is connected to Ant2; on the right – Tx is connected to Ant2, Rx is connected to Ant1
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5.
Fig. 63. Rx/Tx switch implemented on three SPDT structures (model PSM-1G1R1G-TRSW-2500W, PMI company, model CMTRSW-1G1R1G-2K5, Corry Micronics company)
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6.
Fig. 64. Design of modular DPDT switches: a – XFU1, Cobham; b – F940H, Kratos; c – P9400A, Keysight Technologies
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7.
Fig. 65. Characteristics of the PE71S6287 modular DPDT switch: a – IL(f); b – Iso(f)
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8.
Fig. 66. Schematic diagram of the F940H ring modular DPDT switch, made on four series-parallel pin-diode SPDT structures (blue background shows integrated components)
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9.
Fig. 67. Simplified DPDT switch circuit using gallium arsenide field-effect transistors
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10.
Fig. 68. Characteristics of the integrated DPDT switch FMS2017, made using GaAs PHEMT technology: a – IL(f); b – IL(Pin); c – IL(Vу)
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11.
Fig. 69. Inserted attenuation IL(f) in the QPC6222 CMOS switch: a – depending on the signal path; b – at different temperatures
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12.
Fig. 70. Iso(f) decoupling in the QPC6222 CMOS switch: a, b – between channels RF1, RF2, RF3 and RF4; c, d – at different temperatures
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13.
Fig. 71. Compression powers P0.1 dB in switches СМD272P3 (a) and СМD273P3 (b) from Custom MMIC
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14.
Fig. 72. IIP3 linearity indicators in CMD272P3 (a) and CMD273P3 (b) switches from Custom MMIC
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15.
Fig. 73. Schematic diagrams of SP3T switches on pin diodes: a – common anode (MASW-011030); b – common cathode (MASW-011032)
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16.
Fig. 74. Schematic diagram of a powerful SP6T switch MSW6T-6040-600 with a common cathode
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17.
Fig. 75. Structure of the integrated gallium arsenide SP3T switch TQP4M3007, which provides reception/transmission of CDMA mobile communications signals together with the reception of GPS signals. MU - powerful amplifier, LNA - low noise amplifier
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18.
Fig. 76. Simplified structure of the integrated gallium arsenide SP6T switch FMS2028 from Filtronic
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19.
Fig. 77. Introduced attenuation in the transmitting (Tx1, Tx2) and receiving (Rx1, Rx2, Rx3, Rx4) channels of the 6-position gallium arsenide switch FMS2028 from Filtronic: a – in the transmitting and receiving channels; b – in transmission channels at different temperatures; c – in receiving channels at different temperatures
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20.
Fig. 78. Isolation between channels in the gallium arsenide SP6T switch FMS2028: a – between transmitting and receiving channels when the transmitting channels are turned on; b – between transmitting channels with channels Tx1, Tx2 turned on
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21.
Fig. 79. Characteristics of gallium arsenide SP3T switch RFSW6131 (Qorvo): a – IL(f) between different channels; b – IL(f) between RFc and RF1 at different temperatures; c, d – Iso(f) between different channels
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22.
Fig. 80. Characteristics of IIP3(f) in the gallium arsenide SP3T switch RFSW6131: a – when connecting the second and third channels; b – when connecting the first channel and at different temperatures
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23.
Fig. 81. Dependences of IL(Pin) in the gallium arsenide SP3T switch RFSW6131 at different temperatures and control voltages (the third channel is turned on)
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