Email this article Development of a Hall effect sensor based on a SOI MOSFET with voltage control
- Authors: Litvinenko E.1, Polevikov V.1, Krasyukov A.2
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Affiliations:
- АО «ЗНТЦ»
- НИУ «МИЭТ»
- Issue: No 9 (2025)
- Pages: 62-69
- Section: Electronic components
- URL: https://journals.eco-vector.com/1992-4178/article/view/697567
- DOI: https://doi.org/10.22184/1992-4178.2025.251.9.62.68
- ID: 697567
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Abstract
The article presents a SOI MOSFET Hall effect sensor developed at ZNTC JSC. An experimental integrated circuit for non-contact magnetic field sensing with a linear analog output was designed and tested. The obtained characteristics of the device demonstrate its applicability in various technical fields requiring precise measurements and control.
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About the authors
E. Litvinenko
АО «ЗНТЦ»
Author for correspondence.
Email: elitvinenko@zntc.ru
ведущий инженер Дизайн-центра СБИС
Russian Federation, Солнечная аллея, дом 6, Зеленоград, г. Москва, 124527V. Polevikov
АО «ЗНТЦ»
Email: polevikov@zntc.ru
к.т.н., руководитель Дизайн-центра СБИС
Russian Federation, Солнечная аллея, дом 6, Зеленоград, г. Москва, 124527A. Krasyukov
НИУ «МИЭТ»
Email: a_kras@org.miet.ru
к.т.н., доцент
Russian Federation, пл. Шокина, 1, Зеленоград, г. Москва, 124498Supplementary files
