Email this article Study of the absorption spectrum of surface-modified silicon within the wavelength range from 2.5 to 25 μm
- Authors: Gorelov D.V.1, Somov N.M.1, Potapenko I.V.1, Novikov D.V.1,2, Amelichev V.V.1
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Affiliations:
- Research Institution Scientific-Manufacturing Complex “Technological Center”
- National Research University of Electronic Technology “MIET”
- Issue: Vol 18, No 7 (2024)
- Pages: 536-538
- Section: Materials and Coatings
- URL: https://journals.eco-vector.com/1993-7296/article/view/642535
- DOI: https://doi.org/10.22184/1993-7296.FROS.2024.18.7.536.538
- ID: 642535
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Abstract
The optimization results of the generation technology for the modified absorption silicon surfaces are provided that allows to improve the spectral characteristics of devices obtained on its basis: radiation cooling devices, IR sources and sensors.
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About the authors
D. V. Gorelov
Research Institution Scientific-Manufacturing Complex “Technological Center”
Author for correspondence.
Email: journal@electronics.ru
ORCID iD: 0000-0002-0887-9406
Russian Federation, Zelenograd, Moscow
N. M. Somov
Research Institution Scientific-Manufacturing Complex “Technological Center”
Email: journal@electronics.ru
ORCID iD: 0009-0009-9093-3018
Russian Federation, Zelenograd, Moscow
I. V. Potapenko
Research Institution Scientific-Manufacturing Complex “Technological Center”
Email: journal@electronics.ru
ORCID iD: 0009-0007-4500-1022
Russian Federation, Zelenograd, Moscow
D. V. Novikov
Research Institution Scientific-Manufacturing Complex “Technological Center”; National Research University of Electronic Technology “MIET”
Email: journal@electronics.ru
ORCID iD: 0000-0002-9518-1208
Russian Federation, Zelenograd, Moscow; Zelenograd, Moscow
V. V. Amelichev
Research Institution Scientific-Manufacturing Complex “Technological Center”
Email: journal@electronics.ru
ORCID iD: 0000-0002-4204-2626
Russian Federation, Zelenograd, Moscow
References
- Nguyen V. T. H. et al. On the formation of black silicon in SF6-O2 plasma: The clear, oxidize, remove, and etch (CORE) sequence and black silicon on demand. Journal of Vacuum Science & Technology A. 2020; 38(4).
- Atteia F. et al. Morphologies and optical properties of black silicon by room temperature reactive ion etching. Materials Research Bulletin. 2020; 131: 110973.
- Chai J. Y. H., Wong B. T., Juodkazis S. Black-silicon-assisted photovoltaic cells for better conversion efficiencies: a review on recent research and development efforts. Materials Today Energy. 2020; 18: 100539.
- Tan Q. et al. Nano-fabrication methods and novel applications of black silicon. Sensors and Actuators A: Physical. 2019; 295: 560–573.
- Liu W. et al. CMOS MEMS infrared source based on black silicon. 2016 IEEE 11th Annual International Conference on Nano/Micro Engineered and Molecular Systems (NEMS). IEEE. 2016: 200–204.
- Sarkar S. et al. Black silicon revisited as an ultrabroadband perfect infrared absorber over 20 μm wavelength range. Advanced Photonics Research. 2023; 4.(2):2200223.
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