Mathematical modeling of the diffusion process of a semiconductor detector


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Abstract

The article considers mathematical modeling of the technological process of drift of coordinate-sensitive detectors based on silicon with nuclear radiation, the sensor size of which is 50 × 50 × 1.5 mm and 8 bands, and compares them.

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About the authors

Ramizulla A. Muminov

Institute of Materials Science, SPA “Physics-Sun”, Academy of Science of Uzbekistan

Email: detectot@uzsci.net
Dr. Sci. (Phys.-Math.), Professor, Academician Tashkent, Republic of Uzbekistan

Yorkin K. Toshmurodov

Karshi branch of the Tashkent Institute of Irrigation and Agricultural Mechanization Engineers

Email: yorqin.uz@mail.ru
Cand. Sci. (Eng.), Associate Professor Karshi, Republic of Uzbekistan

Giyosjon J. Ergashev

Institute of Materials Science, SPA “Physics-Sun”, Academy of Science of Uzbekistan

Email: ergiyosjon787@gmail.com
senior researcher Tashkent, Republic of Uzbekistan

Mahmodjon O. Yavqochdiyev

Karshi branch of the Tashkent Institute of Irrigation and Agricultural Mechanization Engineers

Email: yorqin.uz@yandex.ru
assistant Karshi, Republic of Uzbekistan

References

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