Structural-phase state and properties of hypereutectic silumin treated with a pulsed electron beam

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Abstract

Hypereutectic silumin composition are promising modern materials of wide application (mechanical engineering, aviation, instrumentation, medicine, etc.). Disadvantages of hypereutectic silumin, significantly limiting their scope, are pores and shells, a large (about 100 µm) inclusions of the second phase lamellar and needle-like. As a result of the studies carried out in this work, the possibility of forming structural-phase states in the surface layer of silumin, the size and morphology of which can purposefully change in the range from tens of micrometers to tens of nanometers, is demonstrated. The irradiation modes that allow more than 5 times to increase the microhardness (15 J/cm2, 150 µs, 0.3 s–1, 5 imp.) and more than 3 times to increase the wear resistance (50 J/cm2, 150 µs, 0.3 s–1, 5 imp.) of silumin were revealed.

About the authors

Yurii F. Ivanov

Institute of High Current Electronics (IHCE) of the Siberian Branch of the Russian Academy of Sciences

Email: yufi55@mail.ru

Dr. Sc., assistant professor, senior scientist, main scientific of IHCE RAS

Russian Federation, 2/3, Akademicheskiy Av., Tomsk, 634055

Sergey P. Eresko

Reshetnev Siberian State University of Science and Technology

Author for correspondence.
Email: eresko07@mail.ru

Dr. Sc., Honored Inventor, professor, Siberian State University of Science and Technology

Russian Federation, 31, Krasnoyarskii rabochii prospekt, Krasnoyarsk, 660037

Anatoly A. Klopotov

Tomsk State University of Architecture and Building

Email: klopotovaa@tsuab.ru

Dr. Sc., professor

Russian Federation, 2, Solyanaya Sq., Tomsk, 6340032

Maria E. Rygina

Institute of High Current Electronics (IHCE) of the Siberian Branch of the Russian Academy of Sciences; National Research Tomsk State University

Email: L-7755me@mail.ru

post-graduate student, junior researcher

Russian Federation, 2/3, Akademicheskiy Av., Tomsk, 634055; 36, Lenin Av., Tomsk, 634050

Elizaveta A. Petrikova

Institute of High Current Electronics (IHCE) of the Siberian Branch of the Russian Academy of Sciences

Email: petrikova@opee.hcei.tsc.ru

junior researcher

Russian Federation, 2/3, Akademicheskiy Av., Tomsk, 634055

Anton D. Teresov

Institute of High Current Electronics (IHCE) of the Siberian Branch of the Russian Academy of Sciences

Email: tad514@yandex.ru

researcher

Russian Federation, 2/3, Akademicheskiy Av., Tomsk, 634055

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Copyright (c) 2021 Ivanov Y.F., Eresko S.P., Klopotov A.A., Rygina M.E., Petrikova E.A., Teresov A.D.

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