Email this article Electronic structure change at cationic substitution of manganese sulfide by elements with variable valence
- Authors: Romanova O.B.1, Aplesnin S.S.1,2, Udod L.V.1,2
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Affiliations:
- Kirensky Institute of Physics, Federal Research Center KSC SB RAS
- Reshetnev Siberian State University of Science and Technology
- Issue: Vol 21, No 3 (2020)
- Pages: 441-450
- Section: Section 3. Technological Processes and Materials
- URL: https://journals.eco-vector.com/2712-8970/article/view/562973
- DOI: https://doi.org/10.31772/2587-6066-2020-21-3-441-450
- ID: 562973
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Abstract
Cation-substituted solid solutions YbXMn1-XS were prepared by the melt method from polycrystalline sulfide powders. The synthesized samples are antiferromagnetic semiconductors and, according to the results of X-ray structural analysis, have an FCC structure of the NaCl type. Structural, electrical, optical, and acoustic properties of the chalcogenide system YbXMn1-XS were studied in the temperature range 80–500 K. The effect of variable valence elements on the electronic structure of cationic substitution of manganese sulfide has been studied. The change in the electronic structure in the YbXMn1-XS system occurs due to the electron-phonon interaction. Samples with variable valence have anomalous compressibility, which is confirmed by the data on the thermal expansion coefficient and the change in the attenuation coefficient. As a result of inelastic interaction with d- electrons, the density of states at the Fermi level changes, this is reflected in the temperature dependence of the conductivity. The positions of the f-level and two electronic transitions were determined from the IR spectra. A zone of temperatures and concentrations was found, where a correlation of structural, electrical, optical and acoustic properties is observed. To explain the experimental results, the electronic structure of the semiconductor is considered and a model is proposed that qualitatively describes the experiment.
About the authors
Oksana B. Romanova
Kirensky Institute of Physics, Federal Research Center KSC SB RAS
Author for correspondence.
Email: rob@iph.krasn.ru
Cand. Sc., Researcher; Kirensky Institute of Physics, Federal Research Center KSC SB RAS
Russian Federation, 50/38, Akademgorodok, Krasnoyarsk, 660036Sergey S. Aplesnin
Kirensky Institute of Physics, Federal Research Center KSC SB RAS; Reshetnev Siberian State University of Science and Technology
Email: aplesnin@sibsau.ru
Dr. Sc., Professor, Head of the Department of Physics; Reshetnev Siberian State University of Science and Technology
Russian Federation, 50/38, Akademgorodok, Krasnoyarsk, 660036; 31, Krasnoyarskii rabochii prospekt, Krasnoyarsk, 660037Lubov V. Udod
Kirensky Institute of Physics, Federal Research Center KSC SB RAS; Reshetnev Siberian State University of Science and Technology
Email: luba@iph.krasn.ru
Cand. Sc., Researcher; Kirensky Institute of Physics, Federal Research Center KSC SB RAS
Russian Federation, 50/38, Akademgorodok, Krasnoyarsk, 660036; 31, Krasnoyarskii rabochii prospekt, Krasnoyarsk, 660037References
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