Email this article Epitaxial growth, morphology and temperature stability of quartzlike dioxide germanium crystals
- Authors: Balitsky V.S.1, Balitsky D.V.1, Pushcharovsky D.Y.2, Balitskaya L.V.1, Setkova T.V.1, Dokina T.N.1
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Affiliations:
- D.S. Korzhinskii Institute of Experimental Mineralogy of Russian Academy of Sciences
- Lomonosov Moscow State University
- Issue: Vol 485, No 1 (2019)
- Pages: 67-70
- Section: Geochemistry
- URL: https://journals.eco-vector.com/0869-5652/article/view/12821
- DOI: https://doi.org/10.31857/S0869-5652485167-70
- ID: 12821
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Abstract
The conditions and mechanisms of epitaxial growth of quartz-like a-GeO2 crystals on quartz substrates using an evaporative-recirculation method are considered. Relatively homogenous a-GeO2 crystals weighing up to 200 g are grown at a growth rate of up to 0.3 mm/day. It is established that molecular adhesion at the boundary between the quartz substrate and the overgrown layer of a-GeO2 cannot prevent its transition to a stable poorly soluble rutile-like phase. This makes it impossible to grow high-germanium quartz single crystals industrially using a mixture of quartz and quartz-like a-GeO2 as a nutrient. However, this process can be implemented if other more soluble germanium-containing compounds, such as quartz-like Si-containing germanium-oxide, are found.
About the authors
V. S. Balitsky
D.S. Korzhinskii Institute of Experimental Mineralogy of Russian Academy of Sciences
Author for correspondence.
Email: balvlad@iem.ac.ru
Russian Federation, 4, Academica Osypyana ul., Chernogolovka, Moscow region, 142432
D. V. Balitsky
D.S. Korzhinskii Institute of Experimental Mineralogy of Russian Academy of Sciences
Email: balvlad@iem.ac.ru
Russian Federation, 4, Academica Osypyana ul., Chernogolovka, Moscow region, 142432
D. Yu. Pushcharovsky
Lomonosov Moscow State University
Email: balvlad@iem.ac.ru
Academician of the RAS
Russian Federation, 1, Leninskie gory, Moscow, 119991L. V. Balitskaya
D.S. Korzhinskii Institute of Experimental Mineralogy of Russian Academy of Sciences
Email: lvbalitskaya@mail.ru
Russian Federation, 4, Academica Osypyana ul., Chernogolovka, Moscow region, 142432
T. V. Setkova
D.S. Korzhinskii Institute of Experimental Mineralogy of Russian Academy of Sciences
Email: lvbalitskaya@mail.ru
Russian Federation, 4, Academica Osypyana ul., Chernogolovka, Moscow region, 142432
T. N. Dokina
D.S. Korzhinskii Institute of Experimental Mineralogy of Russian Academy of Sciences
Email: lvbalitskaya@mail.ru
Russian Federation, 4, Academica Osypyana ul., Chernogolovka, Moscow region, 142432
References
- Балицкий В.С., Балицкий Д.В., Пущаровский Д. Ю., Сеткова Т. В., Балицкая Л. В., Некрасов А.Н. // ДАН. 2017. Т. 477. № 5. С. 578-581.
- Балицкий В.С., Балицкий Д.В., Некрасов А.Н., Балицкая Л. В., Бондаренко Г. В., Самохвалова O. Л. // ДАН. 2004. Т. 396. № 1. С. 89-92.
- Clavier D ., Prakasam M ., Largeteau A ., Boy J.J ., Hehlen B., Cambon M., Cambon O. // Cryst. Eng. Com- muns. 2016. V. 18. № 14. P. 2500-2508.
- Ranieri V ., Darracq S ., Cambon M ., Haines J ., Cam- bon O., Largeteau A., Demazeau G. // Inorg. Chem. 2011. V. 50. № 10. P. 4632-4639.
- Косова Т. Б., Демьянец Л. Н. // ЖНХ. 1988. Т. 33. В. 10. С. 2654-2661.
- Roy R ., Theokritoff S . // J. Cryst. Growth. 1972. V. 12. № 1. P. 69-72.
- Балицкий Д. В., Балицкий В. С., Писаревский Ю. В., Сильвестрова О. Ю., Филиппо Э. // Кристаллография. 2000. Т. 45. № 1. C.151-153.
- Balitsky D. V ., Balitsky V. S., Puscharovsky D.Yu., Kosenko A. V., Bondarenko G. V. // J. Cryst. Growth. 1997. V. 180. Р. 212-219.
- Balitsky D. V ., Balitsky V. S ., Pisarevsky Yu.V ., Philip- pot E., Puscharovsky D.Yu., Sil'vestrova O.Yu. // Ann. Chim. Mat. 2001. V. 26. P. 183-192
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