Epitaxial growth, morphology and temperature stability of quartzlike dioxide germanium crystals

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Abstract

The conditions and mechanisms of epitaxial growth of quartz-like a-GeO2 crystals on quartz substrates using an evaporative-recirculation method are considered. Relatively homogenous a-GeO2 crystals weighing up to 200 g are grown at a growth rate of up to 0.3 mm/day. It is established that molecular adhesion at the boundary between the quartz substrate and the overgrown layer of a-GeO2 cannot prevent its transition to a stable poorly soluble rutile-like phase. This makes it impossible to grow high-germanium quartz single crystals industrially using a mixture of quartz and quartz-like a-GeO2 as a nutrient. However, this process can be implemented if other more soluble germanium-containing compounds, such as quartz-like Si-containing germanium-oxide, are found.

About the authors

V. S. Balitsky

D.S. Korzhinskii Institute of Experimental Mineralogy of Russian Academy of Sciences

Author for correspondence.
Email: balvlad@iem.ac.ru
Russian Federation, 4, Academica Osypyana ul., Chernogolovka, Moscow region, 142432

D. V. Balitsky

D.S. Korzhinskii Institute of Experimental Mineralogy of Russian Academy of Sciences

Email: balvlad@iem.ac.ru
Russian Federation, 4, Academica Osypyana ul., Chernogolovka, Moscow region, 142432

D. Yu. Pushcharovsky

Lomonosov Moscow State University

Email: balvlad@iem.ac.ru

Academician of the RAS

Russian Federation, 1, Leninskie gory, Moscow, 119991

L. V. Balitskaya

D.S. Korzhinskii Institute of Experimental Mineralogy of Russian Academy of Sciences

Email: lvbalitskaya@mail.ru
Russian Federation, 4, Academica Osypyana ul., Chernogolovka, Moscow region, 142432

T. V. Setkova

D.S. Korzhinskii Institute of Experimental Mineralogy of Russian Academy of Sciences

Email: lvbalitskaya@mail.ru
Russian Federation, 4, Academica Osypyana ul., Chernogolovka, Moscow region, 142432

T. N. Dokina

D.S. Korzhinskii Institute of Experimental Mineralogy of Russian Academy of Sciences

Email: lvbalitskaya@mail.ru
Russian Federation, 4, Academica Osypyana ul., Chernogolovka, Moscow region, 142432

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