Email this article Microwave generators using ferrite resonators. Part 1
- Authors: Gevorkyan V.1, Kochemasov V.2, Safin А.1
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Affiliations:
- НИУ «МЭИ»
- ООО «Радиокомп»
- Issue: No 5 (226) (2023)
- Pages: 68-73
- Section: Microwave electronics
- URL: https://journals.eco-vector.com/1992-4178/article/view/631931
- DOI: https://doi.org/10.22184/1992-4178.2023.226.5.68.73
- ID: 631931
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Abstract
The article considers microwave generators with the use of ferrite resonators. Information is provided on the features and characteristics of such generators produced by a number of manufacturers.
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About the authors
V. Gevorkyan
НИУ «МЭИ»
Author for correspondence.
Email: journal@electronics.ru
к. т. н., профессор
Russian FederationV. Kochemasov
ООО «Радиокомп»
Email: vkochemasov@radiocomp.ru
к. т. н., генеральный директор
Russian FederationА. Safin
НИУ «МЭИ»
Email: arsafin@gmail.com
к. т. н., заведующий кафедрой формирования и обработки радиосигналов
Russian FederationReferences
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Supplementary files
Supplementary Files
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1.
JATS XML
2.
Fig. 1. Typical dependence of the intrinsic quality factor Q of a spherical GR on the resonant frequency
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Fig. 2. The simplest resonant unit based on GR
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Fig. 3. Magnetic frequency tuning system for GR, consisting of main and tuning coils
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Fig. 4. Simplified designs of YIG generators: a – with an electromagnet; b – with a permanent magnet
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Fig. 5. Simplified circuits of YIG generators: a – bipolar transistor, circuit with a common base; b – GaAs field-effect transistor with a common gate; c – GaAs field-effect transistor with a common source. Designations: E – emitter, B – base, C – collector, S – source, D – drain, G – gate
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Fig. 6. Phase noise of YIG generators based on silicon bipolar transistors and field-effect transistors made using gallium arsenide technology
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