Three-gap multifrequency resonator for miniature Multibeam klystrons

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详细

A three-gap multibeam prismatic klystron resonator with planar strip elements on a dielectric substrate was studied. The results are obtained, which confirm that the resonator can be used in low-voltage transient multibeam amplifying or generator klystrons.

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作者简介

А. Miroshnichenko

СГТУ им. Ю. А. Гагарина

编辑信件的主要联系方式.
Email: journal@electronics.ru

д. т. н., доцент кафедры ЭПУ

俄罗斯联邦

М. Chernyshev

СГТУ им. Ю. А. Гагарина

Email: journal@electronics.ru

ст. преподаватель кафедры ЭПУ

俄罗斯联邦

N. Akafyeva

СГТУ им. Ю. А. Гагарина

Email: journal@electronics.ru

к. т. н., доцент кафедры ЭПУ

俄罗斯联邦

参考

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  3. Teryaev V. E., Shchelkunov S. V., Hirshfield J. L. Innovative Two-Stage Multibeam Klystron: Concept and Modeling // IEEE transactions on electron devices. 2020. Vol. 67. No. 7.
  4. Quangui Chao, Rui Zhang, Yong Wang, Xu Zhang. Modeling and Design of a High-Efficiency Multibeam Klystron // IEEE transactions on electron devices. 2022. Т. 69. № . 5. С. 2625–2630.
  5. Bin Shen, Yaogen Ding, Zhaochuan Zhang, Honghong Gu, Haibing Ding, Jing Cao, Caiying Wang, and Dongping Gao. Research and Development of S-Band High Power Multibeam Klystron // IEEE transactions on electron devices. 2014. Vol. 61. No. 6.
  6. Korolev A. N., Zaitsev S. A., Pobedonostsev A. S., Rumjantsev S. A., Torbik V. M., Zakurdayev A. D., Sazonov B. V. The Results of the Complex Investigation and Optimization of the Transmitting Modules, Using the Miniature Multibeam Klystrons and TWTs.
  7. Kotov A. S., Gelvich E. A., Zakurdayev A. D. Small-size complex microwave devices (CMD) for onboard applications // IEEE transactions on electron devices. 2007. Vol. 54. No. 5. PP. 1049–1053.
  8. Григорьев А. Д. Терагерцевая электроника. М.: ФИЗМАЛИТ, 2020. 308 с.
  9. Ryskin N. M., Torgashov R. A., Benedik A. I. Study of miniaturized low-voltage backward-wave oscillator with a planar slow-wave structure // Izvestiya VUZ. Applied Nonlinear Dynamics. 2017. Vol. 25. Is. 5. PP. 35–46.
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2. Fig. 1. Resonator design: a – side view of the resonator with the side cover removed; b – cross section of the resonator

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3. Fig. 2. Dependence of parameter S21 for the studied resonant frequencies

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4. Fig. 3. Distribution of high-frequency magnetic field in the resonator along the transit channel

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5. Fig. 4. Change in resonant frequencies of the resonator depending on the length of the tuning element l0 − l1

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6. Fig. 5. Results of studies of the influence of the dielectric constant of the substrate on the resonant frequency (a) and intrinsic quality factor (b)

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7. Tab. 1

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8. Tab. 2

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版权所有 © Miroshnichenko А., Chernyshev М., Akafyeva N., 2023