Design of monolithic F-class microwave amplifiers

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详细

The article considers an approach to the design of monolithic F-class microwave amplifiers in the X-band based on the 0.25 µm GaAs PHEMT technological process.

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作者简介

K. Dudinov

АО «НПП „Исток“ им. Шокина»

编辑信件的主要联系方式.
Email: kvdudinov@istokmw.ru
俄罗斯联邦

N. Zadnepryanaya

АО «НПП „Исток“ им. Шокина»

Email: kvdudinov@istokmw.ru
俄罗斯联邦

参考

  1. Meissner A. The Development of Tube Transmitters by the Telefunken Company // Proceedings of the Institute of Radio Engineers. V. 10. PP. 3–23. Feb. 1922.
  2. Zenneck J., Rukop H. Lehrbuch der Drahhtlosen Telegraphie // 2 teil, Germany: Stuttgart, 1925.
  3. Фомичев И. Н. Новый способ повышения КПД и увеличение мощности передатчиков. М.: Электросвязь, 1938. № 6. С. 55–66.
  4. Колесников А. А. Новый метод повышения КПД и увеличение мощности радиопередатчиков // Мастер связи – Москва. 1940. № 6. С. 5–7.
  5. Schmelzerand D., Long S. I. A GaN HEMT Class F Amplifier at 2 GHz with > 80% PAE // IEEE J. Solid-State Circuits. V. SC-42. PP. 2130–2136. Oct. 2007.
  6. Azalas M. High efficiency class-F MIMIC power amplifiers at Ku-band // Published 6 April 2005. The 2005 IEEE Annual Conference Wireless and Micrwave Technology, 2005.

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2. Fig. 1. F-class amplifier circuit on a field-effect transistor

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3. Fig. 2. Drain-source voltage waveform and current waveform for a transistor in class F mode

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4. Fig. 3. Simplified transistor circuit with microstrip line TL1 (transistor power supply circuit)

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5. Fig. 4. Simplified transistor circuit with microstrip lines TL1, TL2, and TL3

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6. Fig. 5. Simplified transistor circuit with matching circuit at the fundamental frequency f0 and with control circuits at even and odd harmonics

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7. Fig. 6. Output section of the transistor model with parasitic elements

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8. Fig. 7. Dependence of drain current on gate voltage for transistor fet10×56

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9. Fig. 8. Transistor loads (by drain) for the main signal, 2nd and 3rd harmonics, corresponding to the conditions of the F-class mode at gate voltages of −0.45 V and −0.7 V

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10. Fig. 9. Transistor loads (by drain) for the main signal, 2nd and 3rd harmonics, corresponding to the conditions of the F-class mode at gate voltages of −0.9 V and −1.25 V

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11. Fig. 10. Load lines corresponding to transistor loads (see Fig. 8) at supply voltages of −0.45 V and −0.7 V

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12. Fig. 11. Load lines corresponding to transistor loads (see Fig. 9) at supply voltages of −0.9 V and −1.25 V

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13. Fig. 12. Output parameters as functions of gate voltage and transistor output resistance

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14. Fig. 13. Output circuit bandwidth as functions of its quality factor

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15. Fig. 14. Output section diagram of F-class amplifier

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16. Fig. 15. Photo of F-class X-band MMIC microwave amplifier

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17. Fig. 16. Results of measurements and calculations of output power of F-class MMIC microwave amplifier

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18. Fig. 17. Results of measurements and calculations of F-class MMIC microwave amplifier efficiency

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19. Fig. 18. Results of measurements of the microwave power amplifier 4 W

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20. Fig. 19. Results of measurements of the microwave power amplifier 12 W

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