Мақаланы E-mail арқылы жіберу Design of monolithic F-class microwave amplifiers
- Авторлар: Dudinov K.1, Zadnepryanaya N.1
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Мекемелер:
- АО «НПП „Исток“ им. Шокина»
- Шығарылым: № 9 (230) (2023)
- Беттер: 118-127
- Бөлім: Microwave electronics
- URL: https://journals.eco-vector.com/1992-4178/article/view/633099
- DOI: https://doi.org/10.22184/1992-4178.2023.230.9.118.127
- ID: 633099
Дәйексөз келтіру
Ашық рұқсат
Рұқсат берілді
Аннотация
The article considers an approach to the design of monolithic F-class microwave amplifiers in the X-band based on the 0.25 µm GaAs PHEMT technological process.
Негізгі сөздер
Толық мәтін
Авторлар туралы
K. Dudinov
АО «НПП „Исток“ им. Шокина»
Хат алмасуға жауапты Автор.
Email: kvdudinov@istokmw.ru
Ресей
N. Zadnepryanaya
АО «НПП „Исток“ им. Шокина»
Email: kvdudinov@istokmw.ru
Ресей
Әдебиет тізімі
- Meissner A. The Development of Tube Transmitters by the Telefunken Company // Proceedings of the Institute of Radio Engineers. V. 10. PP. 3–23. Feb. 1922.
- Zenneck J., Rukop H. Lehrbuch der Drahhtlosen Telegraphie // 2 teil, Germany: Stuttgart, 1925.
- Фомичев И. Н. Новый способ повышения КПД и увеличение мощности передатчиков. М.: Электросвязь, 1938. № 6. С. 55–66.
- Колесников А. А. Новый метод повышения КПД и увеличение мощности радиопередатчиков // Мастер связи – Москва. 1940. № 6. С. 5–7.
- Schmelzerand D., Long S. I. A GaN HEMT Class F Amplifier at 2 GHz with > 80% PAE // IEEE J. Solid-State Circuits. V. SC-42. PP. 2130–2136. Oct. 2007.
- Azalas M. High efficiency class-F MIMIC power amplifiers at Ku-band // Published 6 April 2005. The 2005 IEEE Annual Conference Wireless and Micrwave Technology, 2005.
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Әрекет
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JATS XML
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Fig. 1. F-class amplifier circuit on a field-effect transistor
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Fig. 2. Drain-source voltage waveform and current waveform for a transistor in class F mode
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Fig. 3. Simplified transistor circuit with microstrip line TL1 (transistor power supply circuit)
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Fig. 4. Simplified transistor circuit with microstrip lines TL1, TL2, and TL3
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Fig. 5. Simplified transistor circuit with matching circuit at the fundamental frequency f0 and with control circuits at even and odd harmonics
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Fig. 6. Output section of the transistor model with parasitic elements
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Fig. 7. Dependence of drain current on gate voltage for transistor fet10×56
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Fig. 8. Transistor loads (by drain) for the main signal, 2nd and 3rd harmonics, corresponding to the conditions of the F-class mode at gate voltages of −0.45 V and −0.7 V
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Fig. 9. Transistor loads (by drain) for the main signal, 2nd and 3rd harmonics, corresponding to the conditions of the F-class mode at gate voltages of −0.9 V and −1.25 V
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Fig. 10. Load lines corresponding to transistor loads (see Fig. 8) at supply voltages of −0.45 V and −0.7 V
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Fig. 11. Load lines corresponding to transistor loads (see Fig. 9) at supply voltages of −0.9 V and −1.25 V
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Fig. 12. Output parameters as functions of gate voltage and transistor output resistance
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Fig. 13. Output circuit bandwidth as functions of its quality factor
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Fig. 14. Output section diagram of F-class amplifier
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Fig. 15. Photo of F-class X-band MMIC microwave amplifier
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Fig. 16. Results of measurements and calculations of output power of F-class MMIC microwave amplifier
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Fig. 17. Results of measurements and calculations of F-class MMIC microwave amplifier efficiency
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Fig. 18. Results of measurements of the microwave power amplifier 4 W
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Fig. 19. Results of measurements of the microwave power amplifier 12 W
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