Microwave radioelectronics – moving forward Science and technology conference “RESVCH-2024”. Part 1

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Abstract

The article describes promising developments presented by participants of the conference «RESVCH-2024», dedicated to the 20th anniversary of Microwave Systems JSC. The first part of the work summarizes the materials of two sections. The reports of section 1 were devoted to modern technologies for the manufacture of microwave transistors and MIS. Section 2 discussed the designs, parameters of microwave components and issues of their reliability.

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About the authors

A. Kisсhinsky

АО «Микроволновые системы»

Author for correspondence.
Email: ak@mwsystems.ru

заместитель генерального директора - главный конструктор

Russian Federation

V. Minnebaev

АО «Микроволновые системы»

Email: vm@mwsystems.ru

заместитель генерального директора по развитию ЭКБ

Russian Federation

References

  1. Lu J., Chen J.-T., Dahlqvist M., et al. Transmorphic epitaxial growth of AlN nucleation layers on SiC substrates for high-breakdown thin GaN transistors. // Applied Physics Letters, 2019. 115 (22). pp.221601.
  2. Веб-ресурс: https://swegan.se/quanfine/.
  3. Веб-ресурс: https://swegan.se/technology/.

Supplementary files

Supplementary Files
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1. JATS XML
2. Fig. 1. AlGaN/GaN heterostructures for NEMT transistors on silicon substrates with a diameter of 200 mm

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3. Fig. 2. Photo of a prototype of a high-power discrete X-band GaN HEMT transistor

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4. Fig. 3. Constructions of the field electrode of the GaN NEMT drain on GaN/Si

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5. Fig. 4. Two-gate X-band GaAs rNEMT

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6. Fig. 5. Control system for amplitude and phase of the Ku frequency range MSP010D

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7. Fig. 6. Gate bus transistor with two links and two cells

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8. Fig. 7. SMA adapter for quick connection

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9. Fig. 8. SMP – coaxial microwave loads

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10. Fig. 9. Ferrite products manufactured using LTCC technology

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Copyright (c) 2025 Kisсhinsky A., Minnebaev V.