电邮这篇文章 Microwave radioelectronics – moving forward Science and technology conference “RESVCH-2024”. Part 1
- 作者: Kisсhinsky A.1, Minnebaev V.1
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隶属关系:
- АО «Микроволновые системы»
- 期: 编号 2 (2025)
- 页面: 42-48
- 栏目: Exhibitions & conferences
- URL: https://journals.eco-vector.com/1992-4178/article/view/680307
- DOI: https://doi.org/10.22184/1992-4178.2025.243.2.42.48
- ID: 680307
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详细
The article describes promising developments presented by participants of the conference «RESVCH-2024», dedicated to the 20th anniversary of Microwave Systems JSC. The first part of the work summarizes the materials of two sections. The reports of section 1 were devoted to modern technologies for the manufacture of microwave transistors and MIS. Section 2 discussed the designs, parameters of microwave components and issues of their reliability.
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作者简介
A. Kisсhinsky
АО «Микроволновые системы»
编辑信件的主要联系方式.
Email: ak@mwsystems.ru
заместитель генерального директора - главный конструктор
俄罗斯联邦V. Minnebaev
АО «Микроволновые системы»
Email: vm@mwsystems.ru
заместитель генерального директора по развитию ЭКБ
俄罗斯联邦参考
- Lu J., Chen J.-T., Dahlqvist M., et al. Transmorphic epitaxial growth of AlN nucleation layers on SiC substrates for high-breakdown thin GaN transistors. // Applied Physics Letters, 2019. 115 (22). pp.221601.
- Веб-ресурс: https://swegan.se/quanfine/.
- Веб-ресурс: https://swegan.se/technology/.
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