Microwave radioelectronics – moving forward Science and technology conference “RESVCH-2024”. Part 1
- Авторлар: Kisсhinsky A.1, Minnebaev V.1
 - 
							Мекемелер: 
							
- АО «Микроволновые системы»
 
 - Шығарылым: № 2 (2025)
 - Беттер: 42-48
 - Бөлім: Exhibitions & conferences
 - URL: https://journals.eco-vector.com/1992-4178/article/view/680307
 - DOI: https://doi.org/10.22184/1992-4178.2025.243.2.42.48
 - ID: 680307
 
Дәйексөз келтіру
Аннотация
The article describes promising developments presented by participants of the conference «RESVCH-2024», dedicated to the 20th anniversary of Microwave Systems JSC. The first part of the work summarizes the materials of two sections. The reports of section 1 were devoted to modern technologies for the manufacture of microwave transistors and MIS. Section 2 discussed the designs, parameters of microwave components and issues of their reliability.
Негізгі сөздер
Толық мәтін
Авторлар туралы
A. Kisсhinsky
АО «Микроволновые системы»
							Хат алмасуға жауапты Автор.
							Email: ak@mwsystems.ru
				                					                																			                								
заместитель генерального директора - главный конструктор
РесейV. Minnebaev
АО «Микроволновые системы»
														Email: vm@mwsystems.ru
				                					                																			                								
заместитель генерального директора по развитию ЭКБ
РесейӘдебиет тізімі
- Lu J., Chen J.-T., Dahlqvist M., et al. Transmorphic epitaxial growth of AlN nucleation layers on SiC substrates for high-breakdown thin GaN transistors. // Applied Physics Letters, 2019. 115 (22). pp.221601.
 - Веб-ресурс: https://swegan.se/quanfine/.
 - Веб-ресурс: https://swegan.se/technology/.
 
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