Ni/Al2O3 powders for new metal-dielectric varistor structures

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Abstract

The article examines the technology for producing metal-dielectric varistor structures based on metallic Ni powders coated with a thin layer of Al2O3 dielectric. The dielectric coating was formed using atomic layer deposition.

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About the authors

D. Abramkin

Институт физики полупроводников СО РАН; АО «Новосибирский завод радиодеталей «Оксид»

Author for correspondence.
Email: dalamber.07@mail.ru

к.ф.-м.н.

Russian Federation, 630090, г. Новосибирск, пр. Лаврентьева, 13; 630102, г. Новосибирск, ул. Кирова, 82

V. Seleznev

Институт физики полупроводников СО РАН

Email: dalamber.07@mail.ru

к.ф.-м.н.

Russian Federation, 630090, г. Новосибирск, пр. Лаврентьева, 13

A. Petrov

Институт физики полупроводников СО РАН

Email: dalamber.07@mail.ru

к.ф.-м.н.

Russian Federation, 630090, г. Новосибирск, пр. Лаврентьева, 13

V. Vdovin

Институт физики полупроводников СО РАН

Email: dalamber.07@mail.ru

к.ф.-м.н.

Russian Federation, 630090, г. Новосибирск, пр. Лаврентьева, 13

Y. Zhivodkov

Институт физики полупроводников СО РАН

Email: dalamber.07@mail.ru
Russian Federation, 630090, г. Новосибирск, пр. Лаврентьева, 13

D. Klimenko

АО «Новосибирский завод радиодеталей «Оксид»

Email: dalamber.07@mail.ru

к.т.н.

Russian Federation, 630102, г. Новосибирск, ул. Кирова, 82

References

  1. Liu J., Chen Y., Cui Y., Han Ch., Zhang Ch., Fan Y., Liang Ch. Influences of sintering process on (Bi2O3–V2O5–Mn3O4–Y2O3–Co2O3–Cr2O3)-doped ZnO varistors. J. Mater. Sci.: Mater. Electron. 2017. 28. 2015–2022.
  2. Reynolds D.C., Look D.C., Jogai B., Litton C.W., Collins T.C., Harsh W., Cantwell G. Neutral-donor-bound-exciton complexes in ZnO crystals. Phys. Rev. B. 1998, 57, 12151–12155.
  3. Clarke D.R. Varistor Ceramics // J. Am. Ceram. Soc. 1999. 82. 485-502.
  4. Krivanek O.L., Williams P., Lin Y.Ch. Direct observation of voltage barriers in ZnO varistors // Appl. Phys. Lett. 1979. 34. 805–806.
  5. Weimer M.A., Hakim L.F., King D.M., Liang X., Weimer A.W., George S.M., Li P., Groner M.D. Ultrafast metal-insulator varistors based on tunable Al2O3 tunnel junctions // Appl. Phys. Lett. 2008. 92. 164101–164104.
  6. Weimer M.A., Weimer A.W., Park W. Theory of conduction in ultrafast metal-insulator varistors // J. Appl. Phys. 2008. 104. 114516–114523.
  7. Kim S., Lee S.H., Jo I.H., Seo J., Yoo Y.E., Kim J.H. Influence of growth temperature on dielectric strength of Al2O3 thin films prepared via atomic layer deposition at low temperature // Scientific Reports. 2022. 12. 5124–5129.

Supplementary files

Supplementary Files
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2. Fig. 1. Schematic representation of the zone diagram near the grain boundary of the ZnO–based MOU: a - at zero offset; b – at offset V based on one boundary. The images are taken from the work [3]

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3. Fig. 2. Schematic zone diagrams of the point of contact of Ni/Al2O3 grains in the MDV structure: a - with a small applied eU displacement < W; b – with a large applied offset eU > W

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4. Fig. 3. AFM images taken from a 10 × 10 mm2 (a) and 1 × 1 mm2 (b) area of the surface of a 300 nm thick Ni layer grown by magnetron sputtering. Profiles (c) and (d) are measured along the green lines in AFM images (a) and (b), respectively

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5. Fig. 4. AFM images taken from a 10 × 10 mm2 (a) and 1 × 1 mm2 (b) section of a 45 nm thick Al2O3 layer grown by the ASO method. Profiles (c) and (d) are measured along the green lines in AFM images (a) and (b), respectively

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6. Fig. 5. SEM image of a cross-section of the Ni/Al2O3/Ni structure

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7. Fig. 6. SEM image of a grain section of Ni powder with Al2O3 coating

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8. Fig. 7. Spatial distributions of the elements (from left to right): O, Al, and Ni over the grain section surface of Ni powder with Al2O3 coating

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Copyright (c) 2025 Abramkin D., Seleznev V., Petrov A., Vdovin V., Zhivodkov Y., Klimenko D.