Email this article EUV lithography: what is expected in 2025?
- Authors: Makushin M.1
-
Affiliations:
- НОБ «Военные науки и оборонная промышленность» БРЭ
- Issue: No 8 (2024)
- Pages: 112-119
- Section: Micro and nanostructures
- URL: https://journals.eco-vector.com/1992-4178/article/view/637279
- DOI: https://doi.org/10.22184/1992-4178.2024.239.8.112.119
- ID: 637279
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Abstract
In the next decade EUV lithography will be used to form topological elements measured in nanometers and angstroms. The article considers the single and multiple patterning techniques.
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About the authors
M. Makushin
НОБ «Военные науки и оборонная промышленность» БРЭ
Author for correspondence.
Email: kys@electronics.ru
ведущий научный редактор
Russian FederationReferences
- Макушин М., Мартынов В. Производственные технологии микроэлектроники: проблемы развития. Часть 2 // ЭЛЕКТРОНИКА: Наука, Технология, Бизнес. 2020. №4 (00196). С. 120–127.
- Макушин М. Микроэлектроника: развитие производственной базы, продажи оборудования и EUV-литография // ЭЛЕКТРОНИКА: Наука, Технология, Бизнес. 2023. №3 (00224). C. 116–129.
- EUV Lithography Market Valuation – 2024–2031 // Verified Market Research. Report ID: 9079. Published Date: Mar 2024.
- Peters L. Key Technologies To Extend EUV To 14 Angstroms // Semiconductor Engineering. July 29th, 2024.
- Sterling T. ASML's next chip challenge: rollout of its new $350 mln 'High NA EUV' machine // Reuters. February 9. 2024.
- Non Chemically Amplified EUV Resist Market, Global Outlook and Forecast 2024–2030 // Grand research Store. Published On: 29 Mar 2024.
- Imec demonstrates readiness of the High-NA EUV patterning ecosystem // IMEC. February 26, 2024.
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Supplementary files
Supplementary Files
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JATS XML
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Fig. 1. EUV scanner with high numerical aperture using chemically enhanced resist (CAR) forms 16nm structures, and using metal oxide resist (MOR) – 10nm structures. Source: IMEC
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Fig. 2. A new low-k absorber in an EUV template improves the process window and reduces the required exposure dose. Further improvements are needed in cross-linking scaling, reducing template parameter spread, and developing carbon nanotube (CNT) pellicles. Source: IMEC
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Fig. 3. The permissible variability (error in setting the crystal angle to a given position) decreases with the achievable resolution.
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