电邮这篇文章 Domestic GaN Microwave Transistors with a Design Support Kit from «PKK Milandr» JSC and Amplifier Modules Based on Them
- 作者: Polunin M.1, Tarasov S.2, Glushkov G.2
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隶属关系:
- АО «ПКК Миландр
- АО «ПКК Миландр»
- 期: 编号 4 (2025)
- 页面: 42-43
- 栏目: Microwave electronics
- URL: https://journals.eco-vector.com/1992-4178/article/view/684406
- DOI: https://doi.org/10.22184/1992-4178.2025.245.4.42.43
- ID: 684406
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The article presents a line of powerful GaN microwave transistors of L, S and C frequency ranges with a design support kit developed by «PKK Milandr» JSC, as well as a series of amplifier modules built on the basis of these transistors.
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作者简介
M. Polunin
АО «ПКК Миландр
编辑信件的主要联系方式.
Email: polunin.m@milandr.ru
ведущий инженер
俄罗斯联邦S. Tarasov
АО «ПКК Миландр»
Email: tarasov.sv@milandr.ru
ведущий инженер
俄罗斯联邦G. Glushkov
АО «ПКК Миландр»
Email: glushkov.gi@milandr.ru
заместитель директора центра по проектированию
俄罗斯联邦补充文件
附件文件
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JATS XML
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Fig. 1. Enclosure of amplifying devices with output power from 5 to 50 W (inclusive)
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Fig. 2. Balance case of devices with output pulse power 1000 and 1200 W
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Fig. 3. L-band (1.2-1.6 GHz) amplifier module with nominal output power of 50W
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Fig. 4. Band 40, Band 41 (2.3-2.7 GHz) amplifier module with a rated output power of 50W
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Fig. 5. L-band (1.2-1.4 GHz) amplifier module with a nominal pulsed output power of 1200 W
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