Email this article Germanium as a photonics substance: from lenses to dislocation-free wafers
- Authors: Naumov A.V.1, Startsev V.V.1
-
Affiliations:
- JSC “Design Bureau “Astrohn”
- Issue: Vol 17, No 2 (2023)
- Pages: 114-133
- Section: Optical Devices & Systems
- URL: https://journals.eco-vector.com/1993-7296/article/view/627298
- DOI: https://doi.org/10.22184/1993-7296.FRos.2023.17.2.114.132
- ID: 627298
Cite item
Open Access
Access granted
Abstract
The article considers the process of development of germanium single crystal growth technology by the Czochralsky method, which allowed the application of germanium properties in IR optics and in gamma radiation detection. It is expected that germanium may return to optoelectronics again: recent developments in the cultivation of dislocation-free crystals have shown that germanium is a promising material for next-generation nanoscale electronic devices and for the integration of optical functions on logic circuits.
Full Text
About the authors
Arkady V. Naumov
JSC “Design Bureau “Astrohn”
Email: journal@electronics.ru
ORCID iD: 0000-0001-6081-8304
Head of the Research Area
Russian Federation, LytkarinoVadim V. Startsev
JSC “Design Bureau “Astrohn”
Author for correspondence.
Email: journal@electronics.ru
ORCID iD: 0000-0002-2800-544X
Candidate of Technical Sciences, Chief Designer
Russian Federation, LytkarinoReferences
- Anoshin K. E., Gasanov A. A., Naumov A. V. Osobennosti sovremennogo rynka germaniya. Cvetnaya metallurgiya. 2016; 2: 67–76. (In Russ). Аношин К. Е., Гасанов А. А., Наумов А. В. Особенности современного рынка германия. Цветная металлургия. 2016; 2: 67–76.
- Bendow B. Optical properties of infrared transmitting materials. J. Electron. Mater. 1974; 3(1): 101–135.
- Smirnov Yu.M., Kaplunov I. A., Kolesnikov A. I., Rodionova G. E. Vyrashchivanie vysokochistyh krupnogabaritnyh monokristallov. Vysokochistye veshchestva. 1990; 6: 213–216. (In Russ). Смирнов Ю. М., Каплунов И. А., Колесников А. И., Родионова Г. Е. Выращивание высокочистых крупногабаритных монокристаллов. Высокочистые вещества. 1990; 6: 213–216.
- Kaplunov I. A., Kolesnikov A. I. Vliyanie harakteristik germaniya na rasseyanie IK-izlucheniya. Poverhnost’. 2002; 2: 14–19. (In Russ). Каплунов И. А., Колесников А. И. Влияние характеристик германия на рассеяние ИК-излучения. Поверхность. 2002; 2: 14–19.
- Kaplunov I. A., Rogalin V. E. Optical properties and applications of germanium in photonics. Photonics Russia. 2019; 13(1): 88–106. doi: 10.22184/FRos.2019.13.1.88.106.
- Smirnov Yu.M., Kaplunov I. A. Monokristally germaniya dlya infrakrasnoj tekhniki. Materialovedenie. 2004; 5: 48–52. (In Russ). Смирнов Ю. М., Каплунов И. А. Монокристаллы германия для инфракрасной техники. Материаловедение. 2004; 5: 48–52.
- Size S. M., Lee M. K. Semiconductor Devices – Physics and Technology. – John Wiley & Sons, Inc., США, 2012, p.578.
- Curtolo D. C., Friedrich S. and Friedrich B. High Purity Germanium, a Review on Principle Theories and Technical Production Methodologies. Journal of Crystallization Process and Technology. 2017; 7:65–84. doi: 10.4236/jcpt.2017.74005.
- Depuydt B., Theuwis A., Romandic I. Germanium: From the first application of Czochralski crystal growth to large diameter dislocation-free wafers. Materials Science in Semiconductor Processing. 2006; 9: 437–443. doi: 10.1016/j.mssp.2006.08.002.
- Fal’kevich E.S., Pul’ner E.O., Chervonyj I. F. Shvarcman L. Ya. Tekhnologiya poluprovodnikovogo kremniya. – M: Metallurgiya 1992 g. 408 s. (In Russ). Фалькевич Э. С., Пульнер Э. О., Червоный И. Ф. Шварцман Л. Я. Технология полупроводникового кремния. – М: Металлургия 1992 г. 408 с.
- Uecker R. The historical development of the Czochralski method. Journal of Crystal Growth.2014; 401: 7–25.
- Naumov A. V., Orekhov D. L., Kul’chickij N. A. Progress v tekhnologiyah poluprovodnikovogo kremniya (obzor). Uspekhi prikladnoj fiziki. 2022; 10(1):.32–49. doi: 10.51368/2307-4469-2022-10-1-32-50. (In Russ). Наумов А. В., Орехов Д. Л., Кульчицкий Н. А. Прогресс в технологиях полупроводникового кремния (обзор). Успехи прикладной физики. 2022; 10(1):.32–49. doi: 10.51368/2307-4469-2022-10-1-32-50
Supplementary files
Supplementary Files
Action
1.
JATS XML
2.
Fig. 1. Technological chain of germanium production and application areas
Download (223KB)
3.
Fig. 2. Dynamics of primary germanium production (according to USGS data) in tons and prices (metal-pages) in $/kg
Download (134KB)
4.
Fig. 3. Structure of optical fiber
Download (133KB)
5.
Fig. 4. Large-diameter germanium lenses in a long-focus IR lens (a) and an anti-epidemic thermal imager with germanium optics (b)
Download (240KB)
6.
Fig. 5. Germanium lenses for IR technology
Download (110KB)
7.
Fig. 6. The first germanium single crystals obtained in 1948
Download (52KB)
8.
Fig. 7. Schematic diagram of the Czochralsky method (a) and the crystal growth control system (b)
Download (174KB)
9.
Fig. 8. The growth of the diameters of germanium ingots by the Czoсhralsky method
Download (89KB)
10.
Fig. 9. Example of a solar cell with five p-n junctions based on A3B5 on a Ge wafer
Download (265KB)
11.
Fig. 10. Example of a A3B5-based VSCEL diode on a Ge wafer
Download (699KB)
12.
Fig. 11. History and forecast of germanium production in the world
Download (81KB)
