Comparison of domestic single photon detectors by QRate with the analogues by ID Quantique
- Authors: Mosentsov S.N.1, Losev A.V.2, Pavlov I.D.2, Zavodilenko V.V.2, Filyaev A.A.2, Burov N.V.1
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Affiliations:
- LLS SC
- QRate LLC
- Issue: Vol 17, No 2 (2023)
- Pages: 134-145
- Section: Quantum Technologies
- URL: https://journals.eco-vector.com/1993-7296/article/view/627306
- DOI: https://doi.org/10.22184/1993-7296.FRos.2023.17.2.134.145
- ID: 627306
Cite item
Abstract
The article is devoted to the comparison of specifications of the single photon detectors manufactured by QRate (Russia) and ID Quantique (Switzerland). Their quantum efficiencies, dark count rates, and afterpulse probabilities have been examined in this work. The test results have showed the interchangeability of detectors and non-compliance of foreign detectors with the declared specifications and demonstrated the potential capacities of domestic development.
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About the authors
S. N. Mosentsov
LLS SC
Author for correspondence.
Email: journal@electronics.ru
ORCID iD: 0000-0003-2678-9663
quantum communications engineer,
Russian Federation, Saint-PetersburgA. V. Losev
QRate LLC
Email: journal@electronics.ru
ORCID iD: 0000-0002-6030-2532
head of development department
Russian Federation, MoscowI. D. Pavlov
QRate LLC
Email: journal@electronics.ru
ORCID iD: 0000-0001-8865-556X
technical director
Russian Federation, MoscowV. V. Zavodilenko
QRate LLC
Email: journal@electronics.ru
ORCID iD: 0000-0002-3252-2984
leading engineer
Russian Federation, MoscowA. A. Filyaev
QRate LLC
Email: journal@electronics.ru
ORCID iD: 0000-0001-7319-8001
scientific project engineer
Russian Federation, MoscowN. V. Burov
LLS SC
Email: journal@electronics.ru
director general
Russian Federation, Saint-PetersburgReferences
- Losev V. et al. Dead Time Duration and Active Reset Influence on the Afterpulse Probability of InGaAs/InP Single-Photon Avalanche Diodes. IEEE Journal of Quantum Electronics. June 2022;58(3): 1–11. Art no. 4500111. doi: 10.1109/JQE.2022.3171671.
- Losev V., Zavodilenko V., Koziy A., Kurochkin Y., Gorbatsevich A. Dependence of Functional Parameters of Sine-Gated InGaAs/InP Single-Photon Avalanche Diodes on the Gating Parameters. IEEE Photonics Journal. April 2022; 14(2): 1–9. Art no. 6817109. doi: 10.1109/JPHOT.2022.3148204.
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