Experimental study and modeling of high-frequency performances of Ge-photodiode for microwave optical receiver integrated circuits

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Abstract

A technique and setup for the probe measurement of high-frequency performances of integrated Ge-photodiode are considered accounting for the diode’s actual environment in a photonic (PIC) or electronic-photonic (EPIC) integrated circuit. The key feature of the technique is the application of two coherent laser optical sources with different wavelengths. The measured data are presented for the optoelectronic conversion coefficient of a Ge photodiode in a specially designed measuring (test) PIC based on the electronic-photonic SiGe BiCMOS technology. At the wavelength of 1 550 nm, the frequency band of the Ge photodiode reaches ~30 GHz that makes it possible to use it as a part of integrated optical receivers with a data transmission rate of at least 25 Gbit / s. Using the electromagnetic simulation, a low-signal equivalent circuit model of a Ge-photodiode placed in the PIC (EPIC) is developed allowing the calculation of characteristics of a monolithically integrated optical receiver.

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About the authors

Andrey A. Kokolov

Tomsk State University of Control Systems and Radioelectronics

Author for correspondence.
Email: journal@electronics.ru
ORCID iD: 0000-0002-8910-4329

Candidate of Technical Sciences, Head of Laboratory IC and SoC

Russian Federation, Tomsk

Feodor I. Sheyerman

Tomsk State University of Control Systems and Radioelectronics

Email: journal@electronics.ru
ORCID iD: 0000-0001-6482-2108

Candidate of Technical Sciences, R&D Director, Research Institute of Microelectronic Systems

Russian Federation, Tomsk

Leonid I. Babak

Tomsk State University of Control Systems and Radioelectronics

Email: journal@electronics.ru
ORCID iD: 0000-0002-2333-0518

Doctor of Technical Sciences, Professor, Head of the Research Institute of Microelectronic Systems

Russian Federation, Tomsk

Dmitry A. Konkin

Tomsk State University of Control Systems and Radioelectronics

Email: journal@electronics.ru
ORCID iD: 0000-0002-5024-0825

Senior lecturer, RSS

Russian Federation, Tomsk

Anton V. Ubaychin

Tomsk State University of Control Systems and Radioelectronics

Email: journal@electronics.ru
ORCID iD: 0000-0001-6284-4645

Associate Professor, RSS

Russian Federation, Tomsk

Artem S. Koryakovtsev

Tomsk State University of Control Systems and Radioelectronics

Email: artem.s.koriakovtsev@tusur.ru
ORCID iD: 0000-0001-6075-390X

Junior researcher of Laboratory IC and SoC

Russian Federation, Tomsk

Evgeniy A. Shutov

Tomsk State University of Control Systems and Radioelectronics

Email: shutov_ea@bk.ru
ORCID iD: 0000-0002-6199-7022

Junior researcher of Laboratory IC and SoC

Russian Federation, Tomsk

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Supplementary files

Supplementary Files
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2. Fig. 1. Structure of a Ge photodiode in the electronic-photonic SiGe technology

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3. Fig. 2. PIC for measuring the Ge photodiode characteristics: a) layout; b) photography of the produced PIC with an optical probe connected to one of the inputs and a connected 5-pin microwave probe (dimensions of the PIC: 2.26 × 1.26 mm2)

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4. Fig. 3. Experimental probe station setup for measuring the high-frequency characteristics of a Ge-photodiode: a) block diagram; b) general view: OG – optical generator, С – combiner, P – polarizer, PS – probe station, OP – optical probe, MP – microwave probe, PD – photodiode, SA – spectrum analyzer, BT – bias tee, PS – power supply, X1 – contact group, ML – matched load

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5. Fig. 4. Measured and simulated normalized AFR of the Ge-photodiode transducer coefficient

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6. Fig. 5. Equivalent circuit of a photodiode in the measuring PIC: a) small-signal model of a Ge-photodiode together with the microwave transmission lines; b) schematic for determining the model parameters C'PD and R's in the CAD tool

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7. Fig. 6. Layout of the connecting microwave transmission lines for simulation in the Momentum (CAD tool ADS)

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Copyright (c) 2024 Kokolov A.A., Sheyerman F.I., Babak L.I., Konkin D.A., Ubaychin A.V., Koryakovtsev A.S., Shutov E.A.

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