The effect of substrate temperature on the optical properties of GaSe thin films obtained by PECVD

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Abstract

GaSe thin films were first obtained by plasma-enhanced chemical vapor deposition (PECVD), where high-purity elemental gallium and selenium were used as starting materials. The interaction between the elements was initiated by HF discharge (40.68 MHz) at a reduced pressure of 0.1 Torr. The composition, surface morphology, structural and optical properties of gallium selenide films were investigated as a function of substrate temperature. The deposited polycrystalline GaSe films were obtained on sapphire substrate at temperatures of 250 °C and 350 °C, and amorphous GaSe films were obtained at 150 °C.

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About the authors

M. A. Kudryashov

Nizhny Novgorod State Technical University n. a. Alekseev; Lobachevsky University

Author for correspondence.
Email: journal@electronics.ru
Russian Federation, Nizhny Novgorod; Nizhny Novgorod

L. A. Mochalov

Nizhny Novgorod State Technical University n. a. Alekseev; Lobachevsky University

Email: journal@electronics.ru
Russian Federation, Nizhny Novgorod; Nizhny Novgorod

Yu. P. Kudryashova

Nizhny Novgorod State Technical University n. a. Alekseev; Lobachevsky University

Email: journal@electronics.ru
Russian Federation, Nizhny Novgorod; Nizhny Novgorod

E. A. Slapovskaya

Lobachevsky University

Email: journal@electronics.ru
Russian Federation, Nizhny Novgorod

M. A. Vshivtsev

Nizhny Novgorod State Technical University n. a. Alekseev; Lobachevsky University

Email: journal@electronics.ru
Russian Federation, Nizhny Novgorod; Nizhny Novgorod

R. N. Kriukov

Lobachevsky University

Email: journal@electronics.ru
Russian Federation, Nizhny Novgorod

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Supplementary files

Supplementary Files
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2. Fig. 1. Schematic view of the plasma-chemical setup for synthesis of GaSe thin films

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3. Fig. 2. XRD patterns of gallium selenide films deposited at different substrate temperatures

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4. Fig. 3. SEM images of gallium selenide films deposited at different substrate temperatures: 150 °C (a), 250 °C (b) and 350 °C (c) (Scale bar is 200 nm)

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5. Fig. 4. AFM images (3×3μm2) of gallium selenide films deposited at different substrate temperatures: 150 °C (a), 250 °C (b) and 350 °C (c).

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6. Fig. 5. Transmission spectra of gallium selenide films deposited at different substrate temperatures

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7. Fig. 6. Absorption spectra in αhν1/2 (а) and αhν2 (b) coordinates vs. hν for GaSe films deposited at different substrate temperatures

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Copyright (c) 2024 Kudryashov M.A., Mochalov L.A., Kudryashova Y.P., Slapovskaya E.A., Vshivtsev M.A., Kriukov R.N.

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