Structure, composition and luminescent properties of the oxidized porous silicon doped with erbium

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Abstract

This paper is devoted to the study of luminescent properties of porous silicon doped with erbium. The development of semiconductor materials activated by the lanthanides is a vital task of contemporary physics and technology of optoelectronic devices. The object of research is oxidized porous silicon doped with the erbium ions. The structural and morphological analysis and study of the luminescent properties of luminescent structure samples based on the porous silicon doped with erbium have been performed. The studies have been carried out by the methods of scanning electron microscopy, Raman spectroscopy and micro-photoluminescence spectroscopy. The analysis of samples has demonstrated a correlation between the process parameters of the produced luminescent structures and efficiency of their photoluminescence. The results of studies can be used as a basis for the production method of silicon luminescent structures for optoelectronics.

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D. N. Artemiev

Korolev Samara National Research University

Author for correspondence.
Email: journal@electronics.ru
ORCID iD: 0000-0002-1942-8205
Russian Federation, Samara

N. V. Latukhina

Korolev Samara National Research University

Email: journal@electronics.ru
ORCID iD: 0000-0003-2651-0562
Russian Federation, Samara

A. A. Melnikov

Korolev Samara National Research University

Email: journal@electronics.ru
ORCID iD: 0000-0002-1953-3670
Russian Federation, Samara

D. A. Nesterov

Korolev Samara National Research University

Email: journal@electronics.ru
Russian Federation, Samara

M. V. Stepikhova

Instituteof Physics of Microstructures of the Russian Academy of Sciences

Email: journal@electronics.ru
ORCID iD: 0000-0001-8269-0348
Russian Federation, Nizhny Novgorod

E. Kh. Khamzin

Korolev Samara National Research University

Email: journal@electronics.ru
Russian Federation, Samara

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Supplementary files

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2. Fig. 1. Transverse cleavage of sample 8: a) micrography of the cleavage (the size of the inner frame is 100 × 120 μm, dpor.layer = 45µm); b) SEM image of the surface

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3. Fig. 2. Raman scattering spectra of erbium-doped por-Si samples with analysis of Raman–active spectral modes: blue is the original spectrum corrected along the baseline, red is modulated by approximation, green lines are phonon modes in the decomposition of the original spectrum by Lawrence functions

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4. Fig. 3. Micro-photoluminescence spectra of erbium-doped por-Si samples

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5. Fig. 4. Photoluminescence spectrum of sample No. 2, measured in two surface areas with different porosities

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Note

The article is recommended for publication by the Expert Council of the XXI All-Russian Youth Competition-Conference on Optics, Laser Physics and Plasma Physics based on the results of the authors’ report (Samara)


Copyright (c) 2024 Artemiev D.N., Latukhina N.V., Melnikov A.A., Nesterov D.A., Stepikhova M.V., Khamzin E.K.