Single-pulse laser-induced Al transfer onto the Si wafer for ohmic contact development

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Abstract

The article examines the aluminum contacts on silicon wafers developed by the laser-induced forward transfer. It is determined that a single-pulse regime with an energy density of 15 J/cm2 leads to an aluminum concentration of 18.6% and a minimum contact resistance of 439 ± 4 Ohm. The method simplifies the contact generation process and eliminates the need for complex cleaning, making it promising for future silicon-based electronic applications.

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About the authors

M. S. Kovalev

Lebedev Physical Institute of the Russian Academy of Sciences

Author for correspondence.
Email: kovalevms@lebedev.ru
ORCID iD: 0000-0001-5074-0718

Cand.of Sc.(Tech.), Senior Researcher

Russian Federation, Moscow

N. G. Stsepuro

Lebedev Physical Institute of the Russian Academy of Sciences; Bauman Moscow State Technical University (National Research University)

Email: kovalevms@lebedev.ru
ORCID iD: 0000-0002-8383-7396

Junior Research Fellow, LPI, Senior Lecturer, Bauman Moscow State Technical University (National Research University (Bauman Moscow State Technical University)

Russian Federation, Moscow; Moscow

E. V. Ulturgasheva

Lebedev Physical Institute of the Russian Academy of Sciences; Bauman Moscow State Technical University (National Research University)

Email: kovalevms@lebedev.ru

Junior Research Fellow, LPI, Junior Research Fellow, Bauman Moscow State Technical University

Russian Federation, Moscow; Moscow

S. I. Kudryashov

Lebedev Physical Institute of the Russian Academy of Sciences; Bauman Moscow State Technical University (National Research University)

Email: kovalevms@lebedev.ru
ORCID iD: 0000-0001-6657-2739

Dr. of Sc.(Phys.&Math.), Leading Researcher at the LPI, Leading Researcher at the Bauman Moscow State Technical University

Russian Federation, Moscow; Moscow

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Supplementary files

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2. Fig. 1. Experimental setup the laser-induced generation of ohmic contacts

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3. Fig. 2. Generation process of ohmic contacts: a) – topology of the obtained experimental sample (the red lines indicate the pairs of Al contacts obtained in one mode); b) –ablation threshold of an Al film with a thickness of 250 nm (blue line – experimental results; dotted line – approximation of results)

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4. Fig. 3. SEM-image of an ohmic contact on the acceptor silicon wafer surface obtained at an energy density of 15.3 J/cm2 at 10 ppd

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5. Fig. 4. 2D maps of the EDS spectra of ohmic contacts on the acceptor silicon wafer surface obtained at an energy density of 15.3 J/cm² and 10 ppd for the elements Si (a), Al (c), O (e), and C (g). The EDS depth measurements are given, obtained at various distances z between the donor and acceptor substrates, for the elements Si (b), Al (d), O (f), and C (h), and at various ppd.

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6. Fig. 5. Changes in the concentration of materials (Si, Al, O, C, etc.) at various energy densities (analysis of EDS spectra of a silicon acceptor substrate under the conditions of ohmic contact development)

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7. Fig. 6. Changes in resistance between two ohmic contacts through an acceptor silicon substrate depending on: a) the energy density (the distance between the acceptor and donor substrates is 20 μm); b) the distance between the donor and acceptor substrates with varying ppd (the energy density is 15 J/cm2)

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8. Fig. 7. Current-voltage characteristic of the Al contacts on the Si wafer

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Copyright (c) 2025 Kovalev M.S., Stsepuro N.G., Ulturgasheva E.V., Kudryashov S.I.