Study of the absorption spectrum of surface-modified silicon within the wavelength range from 2.5 to 25 μm

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Abstract

The optimization results of the generation technology for the modified absorption silicon surfaces are provided that allows to improve the spectral characteristics of devices obtained on its basis: radiation cooling devices, IR sources and sensors.

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About the authors

D. V. Gorelov

Research Institution Scientific-Manufacturing Complex “Technological Center”

Author for correspondence.
Email: journal@electronics.ru
ORCID iD: 0000-0002-0887-9406
Russian Federation, Zelenograd, Moscow

N. M. Somov

Research Institution Scientific-Manufacturing Complex “Technological Center”

Email: journal@electronics.ru
ORCID iD: 0009-0009-9093-3018
Russian Federation, Zelenograd, Moscow

I. V. Potapenko

Research Institution Scientific-Manufacturing Complex “Technological Center”

Email: journal@electronics.ru
ORCID iD: 0009-0007-4500-1022
Russian Federation, Zelenograd, Moscow

D. V. Novikov

Research Institution Scientific-Manufacturing Complex “Technological Center”; National Research University of Electronic Technology “MIET”

Email: journal@electronics.ru
ORCID iD: 0000-0002-9518-1208
Russian Federation, Zelenograd, Moscow; Zelenograd, Moscow

V. V. Amelichev

Research Institution Scientific-Manufacturing Complex “Technological Center”

Email: journal@electronics.ru
ORCID iD: 0000-0002-4204-2626
Russian Federation, Zelenograd, Moscow

References

  1. Nguyen V. T. H. et al. On the formation of black silicon in SF6-O2 plasma: The clear, oxidize, remove, and etch (CORE) sequence and black silicon on demand. Journal of Vacuum Science & Technology A. 2020; 38(4).
  2. Atteia F. et al. Morphologies and optical properties of black silicon by room temperature reactive ion etching. Materials Research Bulletin. 2020; 131: 110973.
  3. Chai J. Y. H., Wong B. T., Juodkazis S. Black-silicon-assisted photovoltaic cells for better conversion efficiencies: a review on recent research and development efforts. Materials Today Energy. 2020; 18: 100539.
  4. Tan Q. et al. Nano-fabrication methods and novel applications of black silicon. Sensors and Actuators A: Physical. 2019; 295: 560–573.
  5. Liu W. et al. CMOS MEMS infrared source based on black silicon. 2016 IEEE 11th Annual International Conference on Nano/Micro Engineered and Molecular Systems (NEMS). IEEE. 2016: 200–204.
  6. Sarkar S. et al. Black silicon revisited as an ultrabroadband perfect infrared absorber over 20 μm wavelength range. Advanced Photonics Research. 2023; 4.(2):2200223.

Supplementary files

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2. Fig. 1. Sketch of the structure and SEM image of the surface-modified silicon morphology obtained by the PCE method (Bosch process)

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3. Fig. 2. Comparison of the measured absorption spectra from the silicon surface before and after PCE according to the Bosch process.

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Copyright (c) 2024 Gorelov D.V., Somov N.M., Potapenko I.V., Novikov D.V., Amelichev V.V.