Email this article Generation and accumulation of vacancies in a crystal grown up from melt
- Authors: Lenchenko VM1, Loginov Y.Y.1
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Affiliations:
- Issue: Vol 10, No 3 (2009)
- Pages: 14-16
- Section: Articles
- URL: https://journals.eco-vector.com/2712-8970/article/view/508250
- ID: 508250
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Abstract
The model of the vacancies formation in a crystal grown up from melt, as a result of its leaky packing at crystallization is offered. The dependence of the vacancies concentration from growth rate of an ingot from melt (vc), a gradient of temperatures at the front of crystallization (G) and parameters of diffusion and drift carrying over of vacancies in a hot zone of a crystal is calculated. It is shown that the vacancy crystal growth occurs, if Voronkov
parameter £, is c >Si, where £ is - ^-т^, г) is
G " ьi 1-п kT 2
concentration of atoms in melt and a crystal accordingly, els is an energy of crystallization of atoms, Dls is a diffusion
factor on a border of melt and crystal. The offered model allows to estimate modes of an ingot growth from melt.
parameter £, is c >Si, where £ is - ^-т^, г) is
G " ьi 1-п kT 2
concentration of atoms in melt and a crystal accordingly, els is an energy of crystallization of atoms, Dls is a diffusion
factor on a border of melt and crystal. The offered model allows to estimate modes of an ingot growth from melt.
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References
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- Воронков, В. В. Образование дефектов в кристалле кремния / В. В. Воронков // Кристаллография. 1984. Т. 29. С. 688-709.
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