电邮这篇文章 Generation and accumulation of vacancies in a crystal grown up from melt
- 作者: Lenchenko VM1, Loginov Y.Y.1
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- 期: 卷 10, 编号 3 (2009)
- 页面: 14-16
- 栏目: Articles
- URL: https://journals.eco-vector.com/2712-8970/article/view/508250
- ID: 508250
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The model of the vacancies formation in a crystal grown up from melt, as a result of its leaky packing at crystallization is offered. The dependence of the vacancies concentration from growth rate of an ingot from melt (vc), a gradient of temperatures at the front of crystallization (G) and parameters of diffusion and drift carrying over of vacancies in a hot zone of a crystal is calculated. It is shown that the vacancy crystal growth occurs, if Voronkov
parameter £, is c >Si, where £ is - ^-т^, г) is
G " ьi 1-п kT 2
concentration of atoms in melt and a crystal accordingly, els is an energy of crystallization of atoms, Dls is a diffusion
factor on a border of melt and crystal. The offered model allows to estimate modes of an ingot growth from melt.
parameter £, is c >Si, where £ is - ^-т^, г) is
G " ьi 1-п kT 2
concentration of atoms in melt and a crystal accordingly, els is an energy of crystallization of atoms, Dls is a diffusion
factor on a border of melt and crystal. The offered model allows to estimate modes of an ingot growth from melt.
参考
- Voronkov, V. V. Vacancy and s elf -inters titial co nc entration incorporated into growing siticon crystals / V. V. Voronkov, R . Falster // J. Appl. P hy s. 1999. V ol. 86. P . 5975-5982.
- Voronkov , V. V. The mechanism of sw irl defect formation in Silicon / V. V. Voronkov // J. Crystal Growth. 1982. V ol. 59. P . 625-643.
- Воронков, В. В. Образование дефектов в кристалле кремния / В. В. Воронков // Кристаллография. 1984. Т. 29. С. 688-709.
- Пузанов, Н. И. Классификация ростовых дефектов в кристаллах кремния, выращенных по методу Чохральского / Н. И. Пузанов, А. М. Эйдензон // Неорган. материалы. 1995. Т. 31. С. 435-443.
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