电邮这篇文章 THE INFLUENCE OF MONOCRYSTALS GROWTH CONDITIONS ON CARRYING OVER AND ACCUMULATION OF IMPURITY ATOMS IN A GROWING CRYSTAL
- 作者: Loginov Y.Y.1, Lenchenko VM1, Mozsherin AV1
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隶属关系:
- 期: 卷 10, 编号 4 (2009)
- 页面: 120-124
- 栏目: Articles
- URL: https://journals.eco-vector.com/2712-8970/article/view/508618
- ID: 508618
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Streams of impurity atoms on each of sites 0
C
is determined. The received expression for K allows to analyze influence of modes of
growth (speed of a crystal grows uc, a gradient of temperatures (through uq) and force fields (through ud)) on carry and accumulation of impurity atoms in a growing crystal.
C
is determined. The received expression for K allows to analyze influence of modes of
growth (speed of a crystal grows uc, a gradient of temperatures (through uq) and force fields (through ud)) on carry and accumulation of impurity atoms in a growing crystal.
参考
- Handbook of Crystal Growth. Vol. 2: Bulk Crystal Growth / ed. by D. T. J. Hurle. Amsterdam : North-Holland Elsevier Science Publishers, 1994.
- Kasap, S. O. Principles of Electronic Materials and Devices / S. O. Kasap. New York : McGraw-Hill, 2002.
- Voronkov, V. V. The mechanism of swirle defects formation in silicon / V V Voronkov // J. Cryst. Growth. 1982. V 59. P. 625-643.
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