Enviar artigo por via de e-mail THE INFLUENCE OF MONOCRYSTALS GROWTH CONDITIONS ON CARRYING OVER AND ACCUMULATION OF IMPURITY ATOMS IN A GROWING CRYSTAL
- Autores: Loginov Y.Y.1, Lenchenko VM1, Mozsherin AV1
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Afiliações:
- Edição: Volume 10, Nº 4 (2009)
- Páginas: 120-124
- Seção: Articles
- ##submission.datePublished##: 15.12.2009
- URL: https://journals.eco-vector.com/2712-8970/article/view/508618
- ID: 508618
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Texto integral
Resumo
Streams of impurity atoms on each of sites 0
C
is determined. The received expression for K allows to analyze influence of modes of
growth (speed of a crystal grows uc, a gradient of temperatures (through uq) and force fields (through ud)) on carry and accumulation of impurity atoms in a growing crystal.
C
is determined. The received expression for K allows to analyze influence of modes of
growth (speed of a crystal grows uc, a gradient of temperatures (through uq) and force fields (through ud)) on carry and accumulation of impurity atoms in a growing crystal.
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Bibliografia
- Handbook of Crystal Growth. Vol. 2: Bulk Crystal Growth / ed. by D. T. J. Hurle. Amsterdam : North-Holland Elsevier Science Publishers, 1994.
- Kasap, S. O. Principles of Electronic Materials and Devices / S. O. Kasap. New York : McGraw-Hill, 2002.
- Voronkov, V. V. The mechanism of swirle defects formation in silicon / V V Voronkov // J. Cryst. Growth. 1982. V 59. P. 625-643.
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