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Mikroèlektronika
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Keywords Förster effect atomic layer deposition charge qubit dissociation etching fluorine atoms fluorocarbon gases gas temperature ionization kinetics magnetron sputtering mechanism memristor modeling molecular beam epitaxy plasma polymerization quantum dot reduced electric field strength resistive switching silicon
Current Issue Cover Page

Vol 54, No 2 (2025)

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Keywords Förster effect atomic layer deposition charge qubit dissociation etching fluorine atoms fluorocarbon gases gas temperature ionization kinetics magnetron sputtering mechanism memristor modeling molecular beam epitaxy plasma polymerization quantum dot reduced electric field strength resistive switching silicon
Current Issue Cover Page

Vol 54, No 2 (2025)

Home > Search > Browse Section Index > NANOTRANSISTORS

NANOTRANSISTORS

Issue Title File
Vol 54, No 2 (2025) Effect of boundary roughness on the variability of the I-V data of silicon field-effect GAA nanotransistors PDF
(Rus)
Masalsky N.V.
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