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Russian Microelectronics
ISSN 0544-1269 (Print) ISSN 3034-5480 (Online)
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Keywords MEMS switch bipolar transistor etching fluorine atoms fluorocarbon gases kinetics magnetron sputtering mechanism memristor modeling molecular beam epitaxy plasma polymerization powerful LDMOS quantum dot radiation intensity reduced electric field strength resistive switching silicon spiking neural networks testing
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Keywords MEMS switch bipolar transistor etching fluorine atoms fluorocarbon gases kinetics magnetron sputtering mechanism memristor modeling molecular beam epitaxy plasma polymerization powerful LDMOS quantum dot radiation intensity reduced electric field strength resistive switching silicon spiking neural networks testing
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